Cisco Technology, Inc.

Craig S Appel

Sanjay Sunder

Peter C Metz

Joseph V Pampanin

Vipulkumar K Patel

Mark Andrew Webster

Kadaba Lakshmikumar

Romesh Kumar Nandwana

Prajwal M Kasturi

Embodiments provide for a tunable driving circuit by monitoring a frequency of a ring oscillator of an electrical integrated circuit connected to an optical modulator to determine operational characteristics of the electrical integrated circuit; setting, based on the operational characteristics, a driving voltage for a plurality of tunable inverters and a plurality of fixed gain inverters that control the optical modulator, wherein each tunable inverter of the plurality of tunable inverters is connected in parallel with a corresponding fixed gain inverter of the plurality of fixed gain inverters on one of a first arm and a second arm connected to the optical modulator; and setting an amplification strength for the plurality of tunable inverters based on the operational characteristics.

Tunable driver

The present disclosure provide for active boost in an electrical driver via a frequency comparator, configured to determine operational characteristics of an electrical circuit connected to an optical modulator based on a frequency difference between a ring oscillator and the clock signal; an electrical driver configured to drive a phase shift of a first optical signal carried on a first arm relative to a second optical signal carried on a second arm of an optical modulator, the electrical driver comprising: a first signal pathway, connected to the first arm of the optical modulator, wherein the first signal pathway includes: an adjustable gain inverter, electrically connected to first and second nodes; a fixed gain inverter, electrically connected to the first and second nodes; an inductor electrically connected between the second node and a third node; and a non-inverting amplifier connected between the third node and the first node.

Optical driver with active boost

Embodiments herein describe providing a decoupling capacitor on a first wafer (or substrate) that is then bonded to a second wafer to form an integrated decoupling capacitor. Using wafer bonding means that the decoupling capacitor can be added to the second wafer without having to take up space in the second wafer. In one embodiment, after bonding the first and second wafers, one or more vias are formed through the second wafer to establish an electrical connection between the decoupling capacitor and bond pads on a first surface of the second wafer. An electrical IC can then be flip chipped bonded to the first surface. As part of coupling the decoupling capacitor to the electrical IC, the decoupling capacitor is connected between the rails of a power source (e.g., VDD and VSS) that provides power to the electrical IC.

Integrated decoupling capacitors

The fault detection system described provides an efficient method to test and monitor component to component connectivity in an electronic package using on chip test circuits and on chip components, which reduces the need for external testing equipment and analysis. The on chip nature allows for both real time testing in the assembly process of the electronic packages and during use of the electronic package by determining an on chip reference measurement and using the reference measurement to determine an operational status of the package.

Connectivity verification for flip-chip and advanced packaging technologies

Thermal tuning and quadrature control of opto-electronic devices using active extinction ratio tracking is proved by phase shifting, via a first phase shifter, a first optical signal carried on a first arm of an interferometer relative to a second optical signal carried on a second arm of the interferometer; combining the first optical signal with the second optical signal as an output signal; detecting a peak value in the output signal; and adjusting a relative phase offset imparted by the first phase shifter on the first optical signal relative to the second optical signal, based on the peak value, to increase an amplitude of the peak value. In various embodiments, the peak value is increased over time to maximize an extinction ratio of the optoelectronic device and maintain the extinction ratio in a maximized state during operation.

Thermal tuning and quadrature control using active extinction ratio tracking

Active relative intensity noise mitigation in nested interferometers using trans-impedance amplifiers is provided by splitting an optical carrier signal into a first version and a second version, wherein the first version is orthogonal to the second version; re-combining predefined portions of the first version and the second version to determine a noise level; modulating at least one of the first version and the second version based on the noise level to reduce the noise level; after modulating the at least one of the first version and the second version based on the noise level, encoding data onto at least one of the first version and the second version; and recombining the first version and the second version to transmit the data.

Active relative intensity noise mitigation using nested interferometers, and trans-impedance amplifier

Embodiments generally relate to a conversion arrangement, a driver arrangement, and a method of producing a complementary complementary metal-oxide-semiconductor (CMOS) output signal for driving a modulator device. The conversion arrangement includes a differential amplifier configured to produce a first amplified signal based on the differential input signal, and at least two transimpedance amplifiers (TIAs) coupled with respective outputs of the differential amplifier and configured to produce a second amplified signal based on the first amplified signal. Respective bias voltages for the TIAs are based on the first amplified signal. The conversion arrangement further includes a common-mode feedback arrangement coupled with outputs of the TIAs and configured to control the first amplified signal based on the second amplified signal, thereby controlling the bias voltages, wherein the complementary CMOS output signal is based on the second amplified signal.

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Macungie, PA, United States of America

Craig S Appel