Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Craig S Allen

John E Schemenaur

Marc Langlois

Michael K Gallagher

Maria Anna Rzeznik

Robert Mitchell Blankenship

Robert H Gore

Angelo Anthony Lamola

Yujian You

Nikoi Annan

Jud Ready

Trifon Tomov

David D Senk

Xiaodong Hu

Jan Tzyy-Jiuan Hwang

Rajan Hariharan

David L Jacques

Nicola Pugliano

S Matthew Cairns

Provided are methods of forming optical components. The methods involves (a) forming over a substrate a layer of a photoimageable composition that includes a hybrid organic-inorganic polymer and a photoactive component, wherein the layer has a first index of refraction and a first dissolution rate; and (b) exposing by multi-photon absorption using actinic radiation a predefined volume of the layer. The volume is caused to have: (i) a second index of refraction which is different than the first index of refraction and/or (ii) a second dissolution rate which is different than the first dissolution rate. The methods have particular applicability in the formation of optical waveguides and other optical components.

Optical component formation method

Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Resistive materials

Electrically resistive material including platinum and from about 5 and about 70 molar percent or iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Dielectric structures particularly suitable for use in capacitors and having a textured surface are provided, together with methods of forming these structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Dielectric structure

Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 &mgr;m and a peak-to-peak wavelength of 2 to 20 &mgr;m.

Resistor structure

Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.

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Shrewsbury, MA, United States of America

Craig S Allen