Applied Materials, Inc.

Craig J Lowrie

Geoffrey Ryding

Marvin Farley

Takao Sakase

Shu Satoh

Adrian John Murrell

Bernard F Harrison

Peter T Kindersley

Peter Michael Banks

Peter Ivor Tudor Edwards

Hiroyuki Ito

David Richard Burgin

Nicholas J Bright

Timothy G Morgan

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Method of implanting a substrate and an ion implanter for performing the method

An ion implantation system is modified to allow variation in the size of the aperture of the mass resolving system, thereby allowing more ions of one mass or ion of more than one mass, such as isotopes, to pass through said opening. Including all isotopes of the desired dopant ions to be collected increases beam current, and consequently the throughput of the implantation process, reduces contamination, and improves the dosage control.

Improved ion implantation using a variable mass resolving system

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Horsham, United Kingdom

Craig J Lowrie