International Business Machines Corporation

Craig E Schneider

John S Smyth

Edward W Conrad

Matthew D Moon

Charles Arthur Whiting

Shawn A Adderly

Daniel Boyd Sullivan

Matthew C Nicholls

David A DeMuynck

Daniel A Delibac

Keith J Machia

Charles J Parrish

Shawn R Goddard

Melissa J Roma

Kyle Babinski

Jed Hickory Rankin

Andrew J Watts

Disclosed is a method of manufacturing integrated circuit (IC) chips. In the method, wafers are received and the backside roughness levels of these wafers are determined. Based on the backside roughness levels, the wafers are sorted into different groups. Chips having the same design are manufactured on wafers from all of the different groups. However, during manufacturing, process(es) is/are performed differently on wafers from one or more of the different groups to minimize systematic variations in a specific parameter (e.g., wire width) in the resulting chips. Specifically, because systematic variations may occur when the exact same processes are used to form IC chips on wafers with different backside roughness levels, the method disclosed herein selectively adjusts one or more of those processes when performed on wafers from one or more of the different groups to ensure that the specific parameter is approximately equal in the resulting integrated IC chips.

Method of fine-tuning process controls during integrated circuit chip manufacturing based on substrate backside roughness

A system and method for optimizing metrology sampling rates in an advanced process control (APC) application. A method is provided for processing a run of workpieces, the method comprising the steps of: providing a database comprising subgroups of data representing characteristics from previously processed workpieces; selecting a first subgroup of data having characteristics that satisfy a predetermined criteria; determining processing conditions for a processing tool corresponding to said first subgroup of data; processing the run of workpieces with the process tool using the determined processing conditions; and measuring the run of workpieces according to a sampling rate determined from the first subgroup of data.

System and method for optimizing metrology sampling in APC applications

A system and method for optimizing a manufacturing process. The system comprises: a database of operational data gathered from previously performed manufacturing processes; a filtering system for filtering the database into a plurality of data subsets; a calculation system for calculating evaluation criteria for a selected data subset; an analysis system for determining if the evaluation criteria meets a set of predetermined requirements; and an iteration system that selects a new data subset if the selected data subset fails to provide evaluation criteria that meets the set of predetermined requirements.

System and method for optimizing manufacturing processes using real time partitioned process capability analysis

A predictive method is used to compensate for intermediate batch sensitivities which inevitably occur during resist batch changeover. The compensation is applied to historical dose levels to arrive at a new dose level estimating an optimum dose. When the system discovers that a new batch of resist is loaded to a tool, historical data is used to calculate a reference dose for each tool. A batch factor is continuously calculated and using historical data along with the batch factor, a dose adjustment is made to maintain proper image size.

Method of photolithographic exposure dose control as a function of resist sensitivity

A method of implementing a new reticle for manufacturing semiconductors on a wafer which involves performing measurements on the reticle and assigning an initial exposure dose by using a predetermined algorithm. The exposure control system utilizes reticle CD data for automatically calculating reticle exposure offset values, i.e. reticle factors. A correlation of reticle size deviations to calculated reticle factors is used to derive a reticle factor for the new reticle. The derived reticle factor is then used to predict an initial exposure condition for the new reticle which is applied to the lithography tool for achieving a wafer design dimension.

Method of photolithographic critical dimension control by using reticle measurements in a control algorithm

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Underhill, VT, United States of America

Craig E Schneider