USA As Represented by Secretary of the Navy

Other

University of Houston System

Craig A Hoffman

Jerry R Meyer

Filbert J Bartoli

James R Lindle

John H Miller, Jr

Terry D Golding

Lorenzo Faraone

Jaroslaw Antoszewski

Eric R Youngdale

A perineometer and method for use of the same are disclosed. In one embodiment of the perineometer, an elongated shaft having an external surface portion is receivable within a pelvic cavity. A sleeve is positioned lengthwise and circumferentially proximate the external surface portion. A haptic actuator having processing that separates amplitude from frequency, in response to receiving a haptic signal from a processor, generates vibrations via actuatable elements integrated into the sleeve. A sensor sensing external pressure forces at the sleeve drives a feedback signal based on the sensed external pressure forces. The haptic signal may be based on a manual signal from a manual actuator and the feedback signal.

Perineometer and method for use of same

A collection device for pet waste material and method for use of the same are disclosed. In one embodiment, a pair of opposing shells extends from a base at which there is pivotally attachment of the opposing shells. The pair of opposing shells are pivotally movable between a closed shell state with the respective shell ends proximate each other and an open shell state wherein the shell ends are spaced from each other. A bag when folded upon itself may have its pouch inserted into the collection device and held therein between the pair of opposing shells. A pair of pockets are respectively coupled to each of the outer surfaces of the shells and configured to accept fingers for grasping and manipulating the collection device between the closed shell state and the open shell state.

Collection device for pet waste material

A collection device for pet waste material and method for use of the same. In one embodiment, a pair of opposing shells extend from a base at which there is pivotally attachment of the opposing shells. The pair of opposing shells are pivotally movable between a closed shell state with the respective shell ends proximate each other and an open shell state wherein the shell ends are spaced from each other. A bag when folded upon itself may have its pouch inserted into the collection device and held therein between the pair of opposing shells. A pair of pockets are respectively coupled to each of the outer surfaces of the shells and configured to accept fingers for grasping and manipulating the collection device between the closed shell state and the open shell state.

This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.

Method of forming an interband lateral resonant tunneling transistor

A type II multiple quantum well, 4 constituent active region, optically clad electrically pumped and optically pumped laser for emitting at a wavelength greater than or equal to about 2.5 microns is disclosed. The active region comprises one or more periods, each period further comprising a barrier layer, a first conduction band layer, a valence band layer and a second conduction band layer.

Type II quantum well laser with enhanced optical matrix

A method and apparatus for restoration of teeth using light curable restoratives while assuring interproximal contact between the restored tooth and an adjacent tooth. The apparatus is in the form of a hand-held instrument with a specialized tip to hold an amount of pre-cured composite which is made from the same material as the restorative material or other compatible material and is intended for permanent placement in the tooth during the restorative process and becomes an integral part of the restoration. A tooth cavitation opening through a vertical tooth surface about which a matrix band has been tightened is filled by alternate deposition and curing of successive layers of the light curable restorative to a level at or below the plane of maximum circumference of the tooth. The amount of pre-cured composite is placed in a layer of uncured composite on this plane and the instrument is used to apply pressure to the amount of pre-cured composite to establish interproximal contact. This layer is cured, securing the amount of pre-cured composite and deforming the matrix band outwardly for subsequent filling and curing to complete the restoration.

Posterior composite restoration instrument and method

A method and apparatus for producing the conductivity-mobility spectrum of an isotropic semiconductor material, and hence infer the mobility and concentration of carriers in the material. Hall voltage and material conductivity are measured at a plurality of magnetic field strengths, values of the spectrum estimated for each field strength, and the estimates numerically iterated to produce convergent values for the spectrum. In one embodiment, interim selected values of the spectrum are prevented from going negative, which increases the precision of the ultimate convergent values. In another embodiment, the iteration equations employ damping factors to prevent over-correction from one iteration to the next, thus preventing convergent instabilities. The preferred iteration is the Gauss-Seidel recursion.

Quantitative mobility spectrum analysis for magnetic field dependent

The present invention is an electro-optical modulator having (a) a first semiconductor layer and a second semiconductor layer; (b) a first quantum well layer having a conduction band minimum at an optically active point (typically the L point or the X point), disposed between the first and second semiconductor layers; (c) a second quantum well layer having a conduction band minimum at the optically inactive (at normal incidence) .GAMMA. point, disposed between the first and second semiconductor layers; (d) a spacer layer disposed between the first and second quantum well layers, where the spacer layer has a conduction band minimum that is large enough for establishing quantum confinement in the first quantum well layer at the optically active point and in the second quantum well layer at the .GAMMA. point, but small enough to allow tunnelling between the two layers on a time scale consistent with the desired switching response time. The invention also has some controllable means for applying an electric field. The invention can produce both intensity and phase changes, and may be used in a Fabry-Perot device to achieve greater modulation for a given active region thickness.

Intersubband electro-optical modulators based on intervalley transfer in

Interband lateral resonant tunneling transistor

The present invention relates to novel optical devices operating in the infrared, based on indirect narrow-gap superlattices (INGS) as the active optical materials. The novel optical devices include (1) wideband all-optical switches, which combine small insertion loss at low light intensities with efficient optical switching and optical limiting at high intensities, and (2) wideband infrared detectors with high collection efficiency and low tunneling noise currents, suitable for use in longwave infrared focal plane arrays. INGS comprise multiple semimetal/semiconductor layers having compatible crystal symmetry across each heterojunction between a given semimetal and the adjoining semiconductor, wherein each semimetal layer sandwiched between semiconductor layers is grown thin enough that each semimetal layer becomes a semiconductor, and wherein each semiconductor layer is thin enough that there is coupling between adjacent semiconductor layers. The present invention utilizes INGS, which are fabricated to meet the criteria E.sub.g.sup.ind &lt;h.omega.&lt;E.sub.g.sup.dir, especially where h.omega.&lt;100 meV, as the optical material for optical switches. The present invention also utilizes INGS as optical detectors if they are fabricated such that E.sub.g.sup.ind &lt;E.sub.g.sup.dir &lt;h.omega., especially where h.omega. is less than 155 meV.

Optical switches and detectors utilizing indirect narrow-gap

A protective layer laser hardens an optical detector. The material for the rotective layer is Hg.sub.1-Y Cd.sub.Y Te, where Y is selected so that the band gap of the protective layer is higher than the expected energy level for photons impinging on the protective layer. Photons with energy levels lower than the band gap are transmitted by the protective layer while photons exceeding the band gap energy level are absorbed or reflected by the protective layer. A semiconductor junction can be formed on the opposite side of the substrate from a Hg.sub.X Cd.sub.X Te layer with a band gap lower than the expected energy level, so that photons transmitted through the substrate are absorbed in the Hg.sub.X Cd.sub.X Te layer and, therefore, detected at the junction. At sufficiently high intensities where detector damage could result, the protective layer switches so that the incident photons are either absorbed or reflected, thus protecting the detector from damage.

Laser hardened backside illuminated optical detector

A bistable optical switch comprising a Fabry-Perot resonator containing a nonlinear semiconductor medium with a desired band structure and whose susceptibility (refractive index) varies with optical energy density. The Fabry-Perot resonator is biased to a point where two stable transmission states are possible. Switching is accomplished by pumping the nonlinear material with an energy hw in the range 1/2.DELTA..sub.g &lt;hw&lt;.DELTA..sub.g, where .DELTA..sub.g is the bandgap between the upper valence band and the conduction band of the nonlinear material, in order to stimulate a two-photon valence-to-conduction band absorption transition at a non-minimum energy and thereby make possible a one-hw photon virtual transition between the heavy hole and split-off valence bands of the nonlinear material. This virtual transition alters the susceptibility thereby switching the resonator to a different stable transmission state. Switching times on the order of picoseconds are obtained because switching-time is not dependent on the carrier recombination time.

Growing community of inventors

Columbia, MD, United States of America

Craig A Hoffman