Mitsubishi Denki Kabushiki Kaisha

Ryoden Semiconductor System Engineering Corporation

Japan Organo Co., Ltd.

Ryoden Semiconductor System Emgineering Corporation

Cozy Ban

Takaaki Fukumoto

Toko Konishi

Motonori Yanagi

Naoki Yokoi

Takeshi Kuroda

Hiroshi Yanome

Akinori Matsumoto

Toshiki Manabe

Kazuhiko Kawada

Toshiaki Ohmori

Itaru Kanno

Akinobu Teramoto

Kazunori Koba

Shoichi Momose

Yasuhiro Asaoka

Kiyoshi Demizu

Toshinori Iwai

A high-temperature ultrapure water production apparatus comprises an evaporator for treating pretreated water obtained by a pretreating system or primary pure water obtained by a primary pure water system to prepare ultrapure water having a high temperature, an ion exchanger for removing trace metal ions from the ultrapure water obtained by the evaporator a product water heat exchanger made of titanium for subjecting to heat exchange the high-temperature ultrapure water obtained by the evaporator and containing the trace metal ions unremoved therefrom and the ultrapure water having ordinary temperature and having its trace metal ions removed by treatment by the ion exchanger a cooling heat exchanger made of SUS for cooling to not higher than 40&deg; C. the ultrapure water containing the unremoved trace metal ions and cooled by the product water heat exchanger for use as feed water for the ion exchanger

High-temperature ultrapure water production apparatus and liquid medicine preparation apparatus equipped with the production apparatus

A system for treatment of semiconductor substrates is comprised of an ozone generating means ( ) , an ejector ( ) which dissolves ozone in a chemical solution or pure water to be used for treatment of semiconductor substrates, an ultraviolet light irradiating means ( ) which irradiates the ozone-containing chemical solution or pure water with ultraviolet light, thereby controlling the concentration of ozone in the chemical solution or pure water, and a treating vessel ( ) in which semiconductor substrates are treated with the chemical solution or pure water containing ozone in controlled concentrations. A system of wet-cleaning and etching of semiconductor substrates is provided having high yields without roughening the surface of the substrates.

Method for treating semiconductor substrates

A semiconductor workpiece cleaning apparatus comprises a cleaning means of a semiconductor workpiece by use of cleaning liquid, charging means of drying liquid, and discharging means of the cleaning liquid. The cleaning means cleans the workpiece by spraying chemical liquid and/or pure water in a chamber, and/or by immersing the workpiece in the chemical liquid and/or pure water. The charging means takes in drying chemical liquid or vapor into contact with the processing chemical liquid or pure water in which the semiconductor workpiece is immersed. The discharging means discharges the processing chemical liquid or pure water interfaced by the processing chemical liquid or pure water.

Semiconductor workpiece cleaning method and apparatus

A silicon wafer is disposed in an inert gas atmosphere, and the temperature thereof is raised, and dichlorosilane is introduced to cause a surface reaction of the silicon wafer to occur, and then dichlorosilane to which WF,is added is introduced so as to deposit tungsten silicide thinly on the above-mentioned silicon wafer. Next, the WF,is stopped and the dichlorosilane is introduced, and after that, dichlorosilane to which WF,is added is introduced so as to deposit the tungsten silicide, thus forming a tungsten silicide film.

Method of forming tungsten silicide film, method of fabricating semiconductor devices and semiconductor manufactured thereby

A semiconductor workpiece cleaning apparatus includes a cleaning arrangement that cleans a semiconductor workpiece by use of a cleaning liquid, a charging arrangement that brings into a chamber a drying liquid, and a discharging arrangement that discharges the cleaning liquid. The cleaning arrangement cleans the workpiece by spraying chemical liquid and/or pure water in the chamber, and by immersing the workpiece in the chemical liquid and/or pure water. The charging arrangement takes in the drying chemical liquid or vapor so as to contact the processing chemical liquid or pure water in which the semiconductor workpiece is immersed. The discharging arrangement discharges the processing chemical liquid or pure water while preserving an interface between the processing chemical liquid or pure water and the drying chemical liquid or vapor.

A semiconductor manufacturing system capable of reducing time required for manufacture of semiconductors with effective use of waiting time of lots in storage equipment is provided. While a lot including a plurality of semiconductor wafers are stored in storage equipment, the semiconductor wafers in the lot are subjected to non-processing steps carried out by non-processing apparatuses such as measuring apparatuses, inspecting apparatuses, and contaminant removing apparatuses.

Semiconductor manufacturing non-processing apparatuses with storage

When an IPA is fed to a nozzle, a flow of the IPA passing through holes is generated. The flow becomes film-shaped and goes downward along an inner surface of a side wall of a processing vessel. Then, the flow is collected by a liquid receiving section formed in a lower portion of the processing vessel and discharged to an outside. The inner surface of the side wall of the processing vessel is covered with the flow of the IPA. Therefore, an IPA vapor can be prevented from condensing uselessly on the inner surface. As a result, the IPA vapor is effectively utilized for condensation on a surface of the object to be processed which is mounted on a pan. Thus, the defective dryness of the object can be prevented.

Drying apparatus and method using IPA of a semiconductor wafer

Semiconductor nitride film etching systems are provided using a hot phosphoric-acid-based treatment solution, wherein the systems contain means for measuring phosphoric acid concentration, silicon concentration, fluorine concentration, or specific gravity or a combination thereof, and additives of the treatment solution are controlled or the treatment solution is exchanged. The concentration of components of the treatment solution, particularly the concentration of silicon, is controlled, thus providing stabilization of the etching rate of a silicon nitride film, and stable control of the etching selection ratio.

Semiconductor nitride film etching system

A nozzle and an exhaust member are provided opposite to each other with an upward opening of a processing vessel interposed therebetween. A side wall of the processing vessel is smoothly curved inward as the opening is approached upward. The nozzle spouts a nitrogen gas fed from a nitrogen gas feeder as a jet for covering the opening toward an exhaust port of the exhaust member. The jet can effectively function as a curtain because the side wall of the processing vessel is curved. Therefore, a cooling coil necessary for a conventional apparatus is not required. Consequently, instability of the state of the IPA vapor caused by the cooling coil can be eliminated so that defective dryness is relieved or eliminated.

Drying apparatus and method

A drying apparatus for processing a surface of a substrate wherein, when a nitrogen gas is fed to a nozzle, a jet of the nitrogen gas spouted through a jet hole is generated. The jet becomes film-shaped and is projected upwardly along an inner surface of a side wall of a processing vessel. Then, the jet is collected into an outside through a suction port formed in an upper portion of the processing vessel. The inner surface of the side wall of the processing vessel is covered with the jet. Therefore, an IPA vapor can be prevented from condensing uselessly on the inner surface. As a result, the IPA vapor is effectively utilized for condensation on a surface of the object to be processed which is mounted on a pan. Thus, defective dryness of the object can be prevented.

Drying apparatus for processing surface of substrate

A method for producing pure water is provided which reduces non-ionic silica in pure or ultrapure water. With the method, non-ionic silica which is contained in water is brought into contact with ozone having a concentration of at least 1 ppm for at least 20 minutes to react therewith and, simultaneously with or after this reaction process, irradiated with ultraviolet rays to undergo ionization and passed through an anion exchange column. The processed water passed through this ion exchange resin column contains practically no non-ionic silica.

Method for producing pure water

An apparatus for producing pure water is provided which includes means for ionizing non-ionic silica which is contained in water comprising a vessel for allowing the water to pass therethrough and stay therein for predetermined lengths of time; means for dissolving ozone in the water in this vessel; means for irradiating the water in which ozone has been dissolved with ultraviolet rays; means for separating gases from liquids located between the means for dissolving ozone and the means for irradiating water; and means for fixing ionized silica in the water to a solid electrolyte by ion exchange.

Apparatus for producing pure water

The apparatus includes a container for accommodating water to be treated and evaporating the water. Container is attached with water supply for supplying the water to be treated into the container. The water to be treated in container is heated by a heater. Vapor evaporated from the inside of container is cooled by a cooler. Distilled water output from cooler is irradiated with ultraviolet light by a ultraviolet light irradiator. An organic decomposed substance contained in the distilled water irradiated with the ultraviolet light is removed by organic decomposed substance removal device, and ultrapure water is obtained.

Apparatus for manufacturing ultrapure water

In an aeration apparatus and method for producing ultrapure water, a device for vigorously mixing an aeration gas with untreated water is attached to a water pipe through which the water is fed to a reaction tank. The device vigorously mixes the aeration gas with the untreated water in the water pipe before the water reaches the reaction tank. The reaction tank can be smaller, an aeration system for producing ultrapure water can be simpler, and the efficiency of the aeration system can be improved.

Aeration apparatus for producing ultrapure water

The present invention provides a wet-processing apparatus comprising a chamber having a working space, means for wet processing in the working space, means for supplying nitrogen gas in fluid communication with the chamber, a nitrogen gas outlet located in a wall of the chamber, means for cleaning nitrogen gas by removing contaminants mixed therewith located in an area of the chamber downstream of the working space and upstream of the nitrogen gas outlet and having a contaminated gas inlet and a treated gas outlet in fluid communication with the chamber, means for diverting gas in the chamber located downstream of the treated gas outlet and upstream of the nitrogen gas supplying means, the means for diverting gas having a first position providing egress of treated gas from the chamber through the nitrogen gas outlet while inhibiting fluid communication to other parts of the chamber and a second position permitting fluid communication and recirculation of the treated gas to other parts of the chamber while preventing egress of the treated gas through the nitrogen gas outlet, and means for circulating nitrogen gas in the chamber.

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Tokyo, Japan

Cozy Ban