Ecole Polytechnique

Centre National De La Recherche Scientifique

Institut Francais Des Sciences Et Technologies Des Transports, De L'amenagement Et Des Reseaux

Costel-Sorin Cojocaru

Didier Pribat

Fatima Zahra Bouanis

Kitchner Max Garry Rose

The invention relates to a method for manufacturing an electronic device, particularly a device including a flexible and/or low-cost substrate and/or carbon nanotubes, and also relates to electronic devices produced using said method. The method for manufacturing an electronic device, including a substrate mad of a material M and an active semiconductor material layer (), includes the following steps: a) providing a carrier () made of an alkali metal salt or alkaline earth metal salt, preferably sodium chloride (NaCl) or potassium chloride (KCl); optionally, b) depositing a dielectric material layer () onto one surface of the carrier; c) forming an active semiconductor material layer () on one surface of the carrier when Step b) is not implemented or on the free surface of the layer when Step b) is implemented; d) forming different components of the electronic device on and/or under the layer; e) depositing a protective layer onto the layer stack, obtained in Step d), of the different components of the electronic device, said protective layer being made of the material M required for the substrate (); and f) removing the carrier () by dissolving one or more of the components of said electronic device on a substrate different from the substrate (). In said removal of the carrier, the method does not include any step for manufacturing one or more of the components of said electronic device on a substrate different from the substrate (). The invention is of use in the field of electronics in particular.

Method for manufacturing an electronic device, particularly a device made of carbon nanotubes

The invention relates to a process for fabricating a vertical transistor structure. On a substrate (), is a first conductive layer (), providing the source or drain electrode function, and an upper conductive layer (), providing the drain or source electrode function. The production of a membrane includes a stack of porous layers including a first insulating layer (), a second conductive layer (), providing the gate electrode function, and an upper insulating layer (') on the surface of the substrate covered with the first conductive layer () providing the drain or source electrode function. The porous layers having substantially stacked pores. The production of filaments made of a semiconductor material is inside some of the stacked pores of the porous layers. The production of the upper conductive layer provides the source or drain electrode function on the surface of the stack of porous layers filled with filaments made of semiconductor material.

Growing community of inventors

Palaiseau, France

Costel-Sorin Cojocaru