Kyocera Avx Components Corporation

Cory Nelson

Marianne Berolini

Gheorghe Korony

Jeff Borgman

Seth Fuller

Alma Iris Cordova

Jonathan C Herr

A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed over the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and a lower terminal. The upper terminals and the lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values without compromising the integrity of the capacitor. For example, each of the upper terminals can have a maximum width and a thickness normal to the maximum width, and a ratio of the width to the thickness can be greater than about 80:1 to prevent physical damage to the capacitor from warping or cracking.

Embeddable semiconductor-based capacitor

A combined metal-oxide-semiconductor (MOS) and metal-insulator-semiconductor (MIS) capacitor assembly is provided. The capacitor assembly includes a substrate comprising a semiconductor material; an oxide layer formed on a surface of the substrate; and an insulator layer formed over at least a portion of the oxide layer. The capacitor assembly further includes first and second conductive terminals, and a third terminal connected with the substrate. The oxide layer is connected in series between the substrate and the first conductive layer to form a first capacitor between the first terminal and the third terminal. The insulator layer is connected in series between the substrate and the second conductive layer to form a second capacitor between the second terminal and the third terminal.

Combined MOS/MIS capacitor assembly

A surface mount component can include a monolithic substrate, an input terminal, an output terminal, and a DC bias terminal. Each terminal can be formed over the monolithic substrate. A conductive trace can be formed over a surface of the monolithic substrate included in a signal path between the input terminal and the output terminal. A thin-film resistor can be connected in a DC bias path between the DC bias terminal and the signal path. The DC bias path can have, at one or more locations along the DC bias path between the DC bias terminal and the signal path, a cross-sectional area in a plane that is perpendicular to the surface of the monolithic substrate. The cross-sectional area of the DC bias path can be less than about 1,000 square microns.

Surface mount radiofrequency component

The present invention is directed to a multilayer ceramic capacitor. The multilayer ceramic capacitor has a first end and a second end that is spaced apart from the first end in a longitudinal direction that is perpendicular to a lateral direction wherein the lateral direction and longitudinal direction are each perpendicular to a Z-direction. The multilayer ceramic capacitor comprises a monolithic body comprising a plurality of dielectric layers and a plurality of electrode layers parallel with the lateral direction. At least one electrode layer includes a first electrode comprising a connecting portion and a central portion extending from the connecting portion in the longitudinal direction wherein the central portion includes a Z-directional edge and the connecting portion includes an edge extending in both the longitudinal direction and the Z-direction and wherein the Z-directional edge of the central portion forms a first angle of from greater than 90° to less than 180° with the edge of the connecting portion. A first external termination disposed along the first end and a second external termination disposed along the second end.

Multilayer ceramic capacitor

A surface mount transmission line capacitor can have excellent high frequency performance characteristics. The surface mount transmission line capacitor can include a monolithic substrate having a surface, a first electrode formed over the surface, a second electrode arranged over the first electrode, a dielectric layer arranged between the first electrode and second electrode, a first terminal layer exposed along the surface of the substrate and electrically connected with the first electrode, and a second terminal layer exposed along the surface of the substrate and electrically connected with the second electrode. The first terminal layer and the second terminal layer can be contained within a perimeter of the surface of the monolithic substrate.

Transmission line capacitor and circuit board including the same embedded within

A heat sink component can include a body including a thermally conductive material that is electrically non-conductive, a lower conductive layer formed over a bottom surface of the body and electrically connected with the ground plane layer, and an upper conductive layer formed over a top surface of the body. The heat sink component can have a length in an X-direction that is parallel with the top surface of the body and a thickness in a direction perpendicular to the top surface. A ratio of the length to the thickness can be greater than about 7.

Embeddable electrically insulating thermal connector and circuit board including the same

A surface mount component can include a first substrate and a second substrate arranged adjacent the first substrate to form a monolithic body. At least one of the first substrate or the second substrate can include a thermally conductive material that is electrically insulating. A thin film component can be arranged between the first substrate and the second substrate. A first terminal can be formed over a first end of the monolithic body. A second terminal can be formed over a second end of the monolithic body that is opposite the first end. A heat sink terminal can contact the thermally conductive material of the at least one of the first substrate or the second substrate.

High frequency and high power thin film component

A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and at least one lower terminal formed. Each of the upper terminals and the at least one lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values. For example, a ratio of the length to the width of the substrate can be in a range from about 3:1 to about 1:3 and an area of the substrate can be less than about 3 mm.

A filter can include a monolithic substrate and at least one conductive layer formed over a top surface of the monolithic substrate and along at least a portion of one or more of a first top edge of the monolithic substrate or a second top edge of the monolithic substrate. A cover layer can be arranged over the top surface of the monolithic substrate. A shield layer can connect with one or more of the conductive layer(s) at the first top edge or the second top edge of the monolithic substrate. The shield layer can include a first portion formed over the first side surface of the cover layer, a second portion formed over the top surface of the cover layer, and a third portion formed over the second side surface of the cover layer.

Filter with cover layer and shield layer

A metal-oxide-semiconductor (MOS) capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a first terminal connected with the surface of the substrate, and a second terminal connected with the conductive layer. The oxide layer can be connected in series between the substrate and the conductive layer to form a capacitor between the first terminal and the second terminal. Each of the first terminal and the second terminal can be exposed along the surface of the substrate for surface mounting the capacitor. The MOS capacitor can exhibit excellent high frequency performance. For example, an insertion loss of the MOS capacitor can be greater than about −0.75 dB for frequencies ranging from about 5 GHz to about 40 GHz.

Metal-oxide-semiconductor capacitor and circuit board including the same embedded therein

A surface mount component is disclosed including an electrically insulating beam that is thermally conductive. The electrically insulating beam has a first end and a second end that is opposite the first end. The surface mount component includes a thin-film component formed on the electrically insulating beam adjacent the first end of the electrically insulating beam. A heat sink terminal is formed on the electrically insulating beam adjacent a second end of the electrically insulating beam. In some embodiments, the thin-film component has an area power capacity of greater than about 0.17 W/mmat about 28 GHz.

High frequency and high power thin-film component

A resistive splitter can include a monolithic substrate and a patterned resistive layer formed over the monolithic substrate. The resistive splitter can include a first terminal, a second terminal, and a third terminal each connected with the patterned resistive layer. The resistive splitter can include at least one frequency compensating conductive layer formed over a portion of the patterned resistive layer. In some embodiments, the resistive splitter can exhibit a first insertion loss response between the first terminal and the second terminal that is greater than about −10 dB for frequencies ranging from about 0 GHz up to about 30 GHz.

The present invention is directed to a multilayer ceramic capacitor. The multilayer ceramic capacitor has a first end and a second end that is spaced apart from the first end in a longitudinal direction that is perpendicular to a lateral direction wherein the lateral direction and longitudinal direction are each perpendicular to a Z-direction. The multilayer ceramic capacitor comprises a monolithic body comprising a plurality of dielectric layers and a plurality of electrode layers parallel with the lateral direction. At least one electrode layer includes a first electrode comprising a connecting portion and a central portion extending from the connecting portion in the longitudinal direction wherein the central portion includes a Z-directional edge and the connecting portion includes an edge extending in both the longitudinal direction and the Z-direction and wherein the Z-directional edge of the central portion forms a first angle of from greater than 90&#xb0; to less than 180&#xb0; with the edge of the connecting portion. A first external termination disposed along the first end and a second external termination disposed along the second end.

Growing community of inventors

Murrells Inlet, SC, United States of America

Cory Nelson