Commissariat a L'energie Atomique Et Aux Energies Alternatives

Thales

Soitec

Corrado Sciancalepore

Bruno Ghyselen

Karim Hassan

Marco Casale

Houssein El Dirani

Badhise Ben Bakir

Sylvie Menezo

Jean-Michel Hartmann

Bertrand Szelag

Hélène Duprez

Aziz Alami-Idrissi

Alain Delpy

David Herisson

Céline Cailler

Badhise Ben-Bakir

A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

Integrated photonic device manufacturing method

A light-emitting device includes a vertical-cavity surface-emitting laser, the resonant cavity of which is transverse multimode supporting transverse modes having rotational symmetry of order two about a main optical axis, and an index-contrast grating including a plurality of pads. The pads include: a central pad, a plurality of peripheral pads, which are periodically arranged along one or more lines that are concentric with respect to the central pad, and which are arranged so that the grating has, with respect to the main optical axis, a rotational symmetry of uneven order higher than or equal to three.

Light emission device comprising at least one VCSEL and a spread lens

The invention relates to a method for manufacturing a waveguide () comprising:

Waveguide manufacturing process

A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon.

Semiconductor laser source

The invention relates to an optoelectronic device for generating a frequency comb comprising a laser source (), a ring microresonator () comprising a resonant ring () made of a third order optically non-linear material with abnormal dispersion regime. It also comprises a spectral tuning device comprising a junction guide () coupled to the resonant ring, electrical biasing means () adapted to apply an electrical voltage to the junction, and a control unit () adapted to modify the value of the electrical voltage until at least one dissipative temporal soliton is formed in the resonant ring.

Optoelectronic device for generation a frequency comb

A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.

Prestructured substrate for the production of photonic components, associated photonic circuit and manufacturing method

The invention relates to an optoelectronic device for generation of a frequency comb comprising:

Optoelectronic device for generation of a coherent frequency comb

A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.

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Grenoble, France

Corrado Sciancalepore