Anritsu Company

Cornelius Constantine

Richard Glenn Barber

A phase compensated switched attenuation device is provided for attenuating high frequency signals while maintaining an insertion loss of less than 1 dB up to 3 GHz. A single GaAs FET is coupled between input port and output port in parallel with a 20 dB pad for switching the device between a through state and an attenuation state. First and second isolation FETs and are coupled between the GaAs FET and pad terminals and to isolate the GaAs FET , decrease return loss when the GaAs FET is on, and increase isolation of the GaAs FET from the pad when the GaAs FET is on. A resistor or a series combination of a resistor and capacitor can be coupled to the pad terminals and in parallel with the pad to improve return loss when the GaAs FET is on. Resistors , and are also provided to reduce distortion, coupling gates of the FETs , and to a plurality of voltage references V and V

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Morgan Hill, CA, United States of America

Cornelius Constantine