Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Cornelius Antonius Van Den Heuvel

Michel Cornelis Josephus Marie Vissenberg

Anthonie Hendrik Bergman

Siebe Tjerk De Zwart

Johan Hendrik Klootwijk

Reinhold Wimberger-Friedl

Ramon Pascal Van Gorkom

Peter Alexander Duine

Nico Maris Adriaan De Wild

Gerardus N Van Veen

Remko Horne

Marcel Mulder

Marinus Josephus Jakobus Dona

Christianne Rossette Maria De Witz

A device includes a nano-structure made of electrically conductive material. The nano-structure is covered by a barrier coating comprising Ti, Zr, Hf, Nb, Ta, Mo, Sc, Y, Ge, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Sr, Al, B, Ba, Bi, and/or Mg oxide in a thickness of at least about 1 nm. The barrier coating is deposited by atomic layer deposition (ALD). A method of detecting a target compound uses the device for surface specifically creating an evanescent field, measuring the dielectric properties of a medium, detecting the presence or the concentration of a target compound, determining the primary structure of a target compound, determining a deviation of the target compound from a control value, amplifying a target compound, or monitoring the amplification of a target compound.

Barrier coated nano structures

An optical separating filter separates impinging light into a first and a second part having different properties. The separating filter comprises reflective filters (FR) arranged in funnel shaped structures (F). Each one of the structures (F) have an inlet area (IA) to receive the impinging light (IL) and an outlet area (OA) smaller than the inlet area. (IA) to converge reflected impinging light (RL) towards the outlet area (OA). The structures (F) comprise a first group of funnel shaped structures (F) constructed to reflect light which has a first property (C) towards their respective first outlet areas (OA) and for transmitting light which has a second property (C) towards respective second outlet areas (OA).

Optical separating filter

The manufacture of pointed electrodes (28) (field emitters) is considerably simplified by a directed sputtering deposition instead of by vapor deposition. Directed deposition of the material (12) to be sputtered can be effected by means of a collimating filter (4) and, if necessary, a cover plate (8).

Method of manufacturing a pointed electrode, and device for using said

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Eindhoven, Netherlands

Cornelius Antonius Van Den Heuvel