Asm IP Holding B.v.

Asm International N.v.

Asm America, Inc.

S.o.i.tec Silicon on Insulator Technologies

Soitec

Cornelius A Van Der Jeugd

Theodorus G M Oosterlaken

Dieter Pierreux

Bert Jongbloed

Steven R A Van Aerde

Jan Willem Maes

Vladimir Ivanovich Kuznetsov

Lucian C Jdira

Christophe F Pomarede

Marinus J De Blank

Jacobus Johannes Beulens

Yuet Mei Wan

Xavier Pages

Radko G Bankras

Ruben Haverkort

Qi Xie

Michael A Todd

Keith Doran Weeks

Werner Knaepen

Herbert Terhorst

Nicolas Daval

Ernst H A Granneman

Konstantin Bourdelle

Frank Huussen

Hessel Sprey

Ian Cayrefourcq

Peter Marc Zagwijn

Robin Roelofs

Ernest H A Granneman

Marinus J M De Blank

Johan Swerts

Hilde De Witte

Christian J Werkhoven

Marinus Josephus De Blank

In some embodiments, a system is disclosed for delivering hydrogen peroxide to a semiconductor processing chamber. The system includes a process canister for holding a HO/HO mixture in a liquid state, an evaporator provided with an evaporator heater, a first feed line for feeding the liquid HO/HO mixture to the evaporator, and a second feed line for feeding the evaporated HO/HO mixture to the processing chamber, the second feed line provided with a second feed line heater. The evaporator heater is configured to heat the evaporator to a temperature lower than 120&#xb0; C. and the second feed line heater is configured to heat the feed line to a temperature equal to or higher than the temperature of the evaporator.

Method and system for delivering hydrogen peroxide to a semiconductor processing chamber

In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.

Process for forming silicon-filled openings with a reduced occurrence of voids

A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

Cyclic aluminum nitride deposition in a batch reactor

In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500&#xb0; C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

Reactive curing process for semiconductor substrates

A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

Methods of forming films in semiconductor devices with solid state reactants

The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas/TEOS flow ratio is between 0.5 and 100; and annealing the silicon dioxide layer at a temperature between 600&#xb0; C. and 1200&#xb0; C., for a duration between 10 minutes and 6 hours.

Method of manufacturing a silicon dioxide layer

A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH. The excited species activates the NH. The substrate is exposed to both the activated NHand the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NHand to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited Nalone, or thermal nitridation using NHalone, with the same process temperatures and nitridation durations.

Remote plasma activated nitridation

Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.

Low temperature silicon compound deposition

Methods of forming silicide films in semiconductor devices

Growing community of inventors

Heverlee, Belgium

Cornelius A Van Der Jeugd