U.S. Philips Corporation

Koninklijke Philips Corporation N.v.

U.S. Phillips Corporation

U.S. Philips Electronics

Vhp Veiligheidspapierfabriek Ugchelen B.v.

Cornelis Maria Hart

Dagobert Michel De Leeuw

Arie Slob

Jan Lohstroh

Johannes O Voorman

Kars-Michiel Hubert Lenssen

Ferdinand Jacob Sluijs

Marco Matters

Bente Adriaan Bordes

Karel E Kuijk

Herbert Lifka

Pierre Hermanus Woerlee

Gerwin Hermanus Gelinck

Roelof H Salters

Daniel J Janssen

Claude J Le Can

Joannes J Koomen

Petrus G Baltus

Gerjan Franciscus Arthur Van De Walle

Godefridus A Hurkx

Johannes Krul

Cornelius M J Mutsaers

Christopher J Drury

Celine Juliette Detcheverry

Wilhelm Bernardus De Hesse

Marinus P Knuvers

Ferdinand Camerik

Hendricus E Wulms

Petrus J M Janssen

An information carrier contains a storage unit, an integrated circuit and a first and a second coupling element. The coupling elements are intermediate in the transfer of data, and energy from a base station to the integrated circuit, and vice versa. Between the base station and the coupling elements, the transfer of data and energy is contactless, such as by capacitive coupling. Between at least the first and/or both of the coupling elements, data and energy are transferred by the of capacitive coupling. The base station may be in an apparatus containing a reading device of the storage unit. To facilitate the capacitive coupling, the base station contains first and second capacitor plates. The information carrier and the apparatus with the base station containing said capacitor plates together constitute the system, which is suitable for copy protection of the information on the storage unit.

Information carrier, apparatus, substrate, and system

The invention relates to a substrate which is made from paper and is provided with at least one integrated circuit which is produced from a semiconductive organic polymer. A semiconductive organic polymer of this nature, when used as the base material for the integrated circuit, leads to the possibility of directly producing the substrate in the required thickness, to the need for support layers and/or protective layers being eliminated, and to the possibility of reducing the cost price of the substrate compared to substrates which comprise an integrated circuit of the silicon type.

Substrate which is made from paper and is provided with an integrated circuit

An information carrier that contains a storage unit, an integrated circuit and a first and a second coupling element. The coupling elements are intermediate in the transfer of data and energy from a base station to the integrated circuit and vice versa. Between the base station and the coupling elements the transfer of data and energy is contactless, and preferably by capacitive coupling. Between at least the first of and preferably both of the coupling elements data and energy are transferred by means of capacitive coupling. The base station is preferably incorporated in an apparatus further containing the reading device of the storage unit. To facilitate the capacitive coupling, the base station contains a first and a second capacitor plate. The information carrier () and the apparatus () with the base station containing the capacitor plates together constitute the system, which is suitable for any protection of the information on the storage unit.

The integrated circuit ( ) has a substrate and a memory with a first memory unit ( ) containing organic material. The first memory unit ( ) has a first ( ) and a second electrode ( ), which are in the non-programmed state electrically connected by an interconnection ( ). On programming, the interconnection ( ) is at least partially broken in that it is locally heated. This heating can be effected electrically and optically. By preference the first memory unit ( ) is integrated in a first layer ( ) of organic material, which also has a first electrode ( ) of the integrated circuit ( ). The integrated circuit ( ) can be used in a transponder which is electrically programmable. In the method of programming, the local heating is effected electrically, by applying a voltage across the first memory unit ( ).

Integrated circuit provided with a substrate and memory transponder

The electronic device ( ) comprises an integrated circuit ( ) with a first ( ) and a second side ( ), on both sides ( ) of which first and second conductive areas ( ) are present. The electronic device ( ) further has a first ( ) and a second ( ) conductive structure, which ( ) are present on a&mdash;preferably enveloping&mdash;layer ( ) of dielectric material. Signal and power to and from the integrated circuit ( ) are transferred through capacitors ( ) formed by the conductive areas ( ) and the conductive structures ( ) and an intermediate layer ( ) of dielectric material. The integrated circuit ( ) may contain a protective layer ( ) in the second conductive area ( ).

Portable electronic device

An identification transponder for transferring an identification code to a base station by varying an RF-signal transmitted by the base station in a rhythm which corresponds to the identification code. The identification transponder comprises an identification code generator, a rectifier; and a load transistor. The load transistor is arranged in such a manner that it performs two tasks: the task of rectifying the RF-signal to provide the DC supply voltage for the transponder, and the task of supplying a variable load to the rectifier to thereby vary the RF-signal transmitted by the base station.

Identification transponder

A DC/DC up/down converter ( ), comprising inductive energy storage means (L), switching means (S , S , S ) and control means ( ). The control means ( ) are arranged for operatively controlling the switching means (S , S , S ) for transferring electrical energy to a first output (Vout ) of the DC/DC converter ( ) in a down-conversion mode and for transferring electrical energy from the first output (Vout ) to a second output (Vout ) of the DC/DC converter ( ) in an up-conversion mode.

DC/DC up/down converter

Transponder and appliance

For transient-current testing of an electronic circuit, a differentiating current measuring device is arranged for measuring an undershoot voltage for each of a series of current pulses controlled in the circuit. In particular, the device is executed in integrated circuit technology and simulates a differentiating current probe. Furthermore, it may have calibration for imparting an offset voltage to each undershoot voltage of the series. This calibrates an actual potential of the simulation and produces for a correct Device Under Test in each cycle a substantially uniform undershoot voltage.

Arrangement for transient-current testing of a digital electronic CMOS circuit

A simple and reliable method of providing a vertical interconnect between thin-film microelectronic devices is provided. In said method, a tool tip is used to make a notch in a vertical interconnect area of two organic electrically conducting areas separated from each other by an organic electrically insulating area. The method is used in the manufacture of integrated circuits consisting substantially of organic materials.

Method of providing a vertical interconnect between thin film microelectronic devices

The integrated circuit ( ) suppresses leakage currents, which usually take place between neighboring transistors ( ) through the unpatterned semiconductor layer ( ). In its first layer ( ), the circuit ( ) comprises electrically conductive tracks ( ) which are in contact with the semiconductor layer ( ), some of which tracks ( ) are in use as source and drain electrodes ( ) and are preferably fork-shaped and interdigitated. The suppression of leakage currents is achieved by putting neighboring electrodes ( ) in different transistors ( ) at the same voltage and by excluding the presence of any other electrically conductive tracks between those neighboring electrodes ( ). Interconnect lines ( ) carrying input or output signals are positioned in a second layer ( ) as much as possible, which second layer ( ) comprises electrically conductive tracks ( ) and is not in contact with the semiconductor layer ( ). The integrated circuit ( ) of the invention is very well fitted to contain arrays of NAND structures.

Field effect transistor with organic semiconductor layer

An identification transponder comprising an identification code generator (10) embodied as an integrated circuit predominantly comprising organic materials. The integrated circuit may be provided on an anti-theft sticker (5) accommodating an LC resonant circuit (3, 4).

A device compensated for an undesired capacitance includes a first and a second node between which nodes the undesired capacitance is present. A diode driven in breakthrough is coupled between the first and the second node. As a diode driven in breakthrough exhibits the characteristics of a negative capacitance, a compensation of the undesired capacitance is achieved.

Electronic device comprising means for compensating an undesired

The invention relates to a semiconductor memory with a semiconductor body which is provided at a surface with a system of memory elements arranged in rows and columns. For addressing, the surface is provided with a system of mutually adjacent parallel selection lines 4, each coupled at one end to a selection transistor 19 with which the connection between the selection line and peripheral electronics can be opened or closed. These transistors are thin-film transistors which are formed, for example, in the selection lines themselves. As a result of this, the selection lines, and thus also the memory elements in the matrix, can be provided with minimum pitch.

Semiconductor memory having thin film field effect selection transistors

Latch circuit including a differential amplifier T1, T2 for amplifying a data signal D, ND to be latched, applied to the inputs 1, 2 of the differential amplifier, a flip-flop T3, T7, T4, T8 for latching the amplified data signal across the load impedances 6, 7 which are connected to the transistors T1, T2 through switching transistors T5 and T6 if the clock signal CLK is high and are disconnected therefrom if the clock signal is low. When there is a high clock signal the emitter junctions 11, 14 of the flip-flop are currentless. The transistors T5 and T6 fix the voltage at these junctions, and thereby avoid a variation of the junction voltage. Consequently, the decision accuracy of the latching operation is retained even with high clock signal frequencies.

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Eindhoven, Netherlands

Cornelis Maria Hart