Asml Netherlands B.v.

Cornelis Johannes Henricus Lambregts

Roy Werkman

Rizvi Rahman

Everhardus Cornelis Mos

Wim Tjibbo Tel

Ralph Brinkhof

Cédric Désiré Grouwstra

Marc Hauptmann

Sarathi Roy

Weitian Kou

Wolfgang Helmut Henke

Manouk Rijpstra

Pieter Gerardus Jacobus Smorenberg

Ekaterina Mikhailovna Viatkina

Amir Bin Ismail

Jeroen Van Dongen

Theo Wilhelmus Maria Thijssen

Erik Mathijs Maria Crombag

Ruud Rudolphus Johannes Catharinus De Wit

Hans Marinus Struijs

Chi-Fei Nien

Ivo Matteo Leonardus Weijden

Maria Helena Schut

Chang-Wei Chen

Erwin Riemens

Allwyn Boustheen

Menno Meeldijk

Raheleh Pishkari

A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

Method for controlling a semiconductor manufacturing process

A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

Device manufacturing method

A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

Computational metrology based correction and control

A method for determining a preferred control strategy relating to control of a manufacturing process for manufacturing an integrated circuit. The method includes: obtaining process data associated with a design of said integrated circuit; and obtaining a plurality of candidate control strategies configured to control the manufacturing process based on the process data, each candidate control strategy including an associated cost metric based on an associated requirement to implement the candidate control strategy. A quality metric related to an expected performance of the manufacturing process is determined for each candidate control strategies, and a preferred control strategy is selected based on the determined quality metrics and associated cost metrics for each candidate control strategy.

Method for evaluating control strategies in a semiconductor manufacturing process

Growing community of inventors

Geldrop, Netherlands

Cornelis Johannes Henricus Lambregts