Koninklijke Philips Corporation N.v.

Cornelis Adrianus Henricus Antonius Mutsaers

Herbert Lifka

Christoph Gerard August Hoelen

Ramon Pascal Van Gorkom

Marco Van As

Huib Cooijmans

Petrus Maria Meijer

Ronald Dekker

Willem Frederik Adrianus Besling

Edward Willem Albert Young

Nijs Cornelis Van Der Vaart

Theodorus Martinus Michielsen

Greja Johanna Adriana Maria Verheijden

Dirk J Gravesteijn

Carel Van Der Poel

A lighting device () is disclosed. The device comprises a plurality of light sources () providing light in different wavelengths, a collimating means () having a receiving end () and an output end (), wherein said light sources are arranged at said receiving end. The collimating means comprises a set of wavelength selective filters () arranged as sub-collimators () to each of said plurality of light sources such that, for each light source, said sub-collimator collimates the light from its light source, and said wavelength selective filter of said each light source is translucent for light from adjacent light sources of different wavelength, wherein said wavelength selective filters are high pass or low pass filters.

Lighting device

A lighting device () is disclosed. The device comprises a plurality of light sources () providing light in different wavelengths, a collimating means () having a receiving end () and an output end (), wherein said light sources are arranged at said receiving end. The collimating means comprises a set of wavelength selective filters () arranged as sub-collimators () to each of said plurality of light sources such that, for each light source, said sub-collimator collimates the light from its light source, and said wavelength selective filter of said each light source is translucent for light from adjacent light sources of different wavelength, and a second set of wavelength selective filters comprising compensation filters () wherein each compensation filter is arranged symmetrically with respect to corresponding part of the wavelength selective filter of said first set around a general light direction of the corresponding light source.

A light emitting device () is provided, comprising a substrate (), a first electrically conductive layer (), a light emitting layer (), and a second electrically conductive layer (). The light emitting device () further comprises at least one metal shunt () which is in electrical contact with said first electrically conductive layer (). The at least one metal shunt () is isolated from said second electrically conductive layer () at least by means of a dielectric oxide layer (). The present invention allows for the use of electrically insulating material between one or more metal shunts and a cathode layer without reducing the effective pixel area of the device.

Light emitting device with anodized metallization

Individual devices () are locally attached to a carrier substrate (), so that they can be removed therefrom individually. This is achieved through the use of a patterned release layer, particularly a layer that is removable through decomposition into gaseous or vaporized decomposition products. The mechanical connection between the carrier substrate () and the individual devices () is provided by a bridging portion () of an adhesion layer ().

Method of manufacturing a plurality of semiconductor devices and carrier substrate

A display panel is formed on a substrate and includes display pixels with at least one light emissive layer and at least one electrode layer or cathode deposited on or over said light emissive layer. The display panel further includes electrically conductive structures shunting the electrode layer. The barrier structures separating the display pixels may be used as the electrically conductive structures.

Display panel comprising conductive barrier structures

The invention relates to a semiconductor device comprising a substrate ( ) comprising for instance silicon with thereon a layer ( ) comprising at least organic material which contains a passage ( ) to the substrate ( ). The passage ( ) has walls ( ) transverse to the layer ( ). A metal layer ( ) is applied on the substrate ( ) in at least that portion which adjoins the passage ( ). The organic material forming the walls ( ) of the passage ( ) is covered with an oxide liner ( ), and the passage ( ) is filled with a metal ( ). According to the invention, a metal liner ( ) comprising Ti or Ta is provided between the oxide liner ( ) and the metal ( ) filling the passage ( ). It is achieved by this that the device has a better barrier between the organic material ( ) and the interconnection metal ( ) and that the organic material ( ) has a better protection during the various steps of the process.

Method of manufacturing a two layer liner for dual damascene vias

The invention relates to a semiconductor device having a substrate ( ) for instance silicon, with a layer ( ) of at least organic material which contains a passage ( ) to the substrate ( ). The passage ( ) has walls ( ) transverse to the layer ( ). A metal layer ( ) is applied on the substrate ( ) in at least that portion which adjoins the passage ( ). The organic material forming the walls ( ) of the passage ( ) is covered with an oxide liner ( ), and the passage ( ) is filled with a metal ( ). According to the invention, a metal liner ( ) of Ti or Ta is provided between the oxide liner ( ) and the metal ( ) filling the passage ( ). It is achieved by this that the device has a better barrier between the organic material ( ) and the interconnection metal ( ) and that the organic material ( ) has a better protection during the various steps of the process.

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Eindhoven, Netherlands

Cornelis Adrianus Henricus Antonius Mutsaers