Tokyo Electron Limited

Corey Lemley

Anton J deVillers

Hoyoung Kang

Robert Daniel Clark

Mark H Somervell

Gerrit J Leusink

Richard Farrell

Lior Huli

Dina Triyoso

Ryan Burns

A method of supplying a processing solution includes shutting off a feed line supplying the processing solution to a chemical filter, installing a dry chemical filter in a filter housing of the chemical filter, closing an output line from the filter housing to a nozzle configured to dispense the processing solution (either before or after installing the dry chemical filter), applying a vacuum to the filter housing while the feed line remains shut, and opening the feed line while locking in the vacuum within the filter housing. Shutting off the feed line and closing the output line may be accomplished by closing respective valves. Before installing the dry filter, a valve to the vacuum may be closed. The method may be performed by a processor executing a program stored in a non-transitory computer-readable medium.

Vacuum assisted filtration

A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.

Selective film formation using a self-assembled monolayer

Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes forming a first material in a first annular region of the front side surface, resulting in the first annular being coated with the first material. The first annular region is immediately adjacent to a perimeter of the substrate. The first annular region has a first outer perimeter proximate to the perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate. The method also includes forming a second material in an interior region of the front side surface, the second material coating the front side surface without adhering to the annular region.

Method and system for prevention of metal contamination by using a self-assembled monolayer coating

In certain embodiments, a method for processing a substrate includes applying a surface treatment to selected surfaces of the substrate. The substrate has a non-planar topography including structures defining recesses. The method further includes depositing a fill material on the substrate by spin-on deposition. The surface treatment directs the fill material to the recesses and away from the selected surfaces to fill the recesses with the fill material without adhering to the selected surfaces. The method further includes removing the surface treatment from the selected surfaces of the substrate and depositing a planarizing film on the substrate by spin-on deposition. The planarizing film is deposited on the selected surfaces and top surfaces of the fill material.

Planarization of semiconductor devices

Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

Systems and methods for inhibiting detectivity, metal particle contamination, and film growth on wafers

Techniques herein include a method of forming etch masks to form contact holes and other features. Techniques herein use a reversal method to create contact hole patterns with improved critical dimension uniformity and contact edge roughness as compared to traditional direct print photolithography methods. A pillar is printed as an initial structure. The initial structure is reshaped to change smoothness, uniformity, and/or dimensions. A conformal film is deposited on the pillar. The conformal film can include a metal-containing material. A planarization process is executed that removes pillars down to the working surface of the substrate leaving the conformal film on the working surface of the substrate. This conformal film can then be used as an etch mask for additional pattern transfer.

Method of advanced contact hole pattering

A process is disclosed for wetting a filter cartridge used to treat a liquid solvent used in semiconductor manufacture. In the process, a filter cartridge having void spaces wherein the void spaces contain residual gas from the manufacturing process used to make the filter cartridge is connected to a source of purging gas. The purging gas is flowed through the filter cartridge to at least partially displace at least a portion of the residual gas from the manufacturing process used to make the filter cartridge. Next, liquid solvent is pumped through the filter cartridge so that the purging gas dissolves into the liquid solvent and to at least partially fill the void spaces to thereby at least partially wet out the filter cartridge with the liquid solvent.

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Troy, NY, United States of America

Corey Lemley