Motorola Corporation

Conrad S Monroe

Thierry Sicard

Dennis Brian Miller

William M Beckenbaugh

Kent W Hansen

Daniel Joseph Viza

Steve Charles Machuga

A semiconductor power device comprises a metal conductor (6) coupled to a semiconductor region (30) of the device, one or more bumps (8) formed in contact with the metal conductor (6) and a frame (14) formed of high conductivity material. The frame (14) comprises a connecting portion (18) for connecting to at least one of the one or more bumps (8) so as to provide an external connection to the semiconductor region (30) of the device.

Semiconductor power device

A microelectronic assembly (10) is formed by bonding an integrated circuit component (20) to a substrate (12). The substrate (12) includes a via (22) and a metal contact (24) closing the via (22). A bonding agent (14), such as a solder paste or a conductive epoxy, is dispensed into the via (22) adjacent the metal contact (24). A carrier tape (16) that includes partially-cured films (18) is placed onto the substrate (12) such that the film (18) covers the via (22) and forms a gap (28) between the substrate (12) and the film (18). The integrated circuit component (20) is superposed onto the substrate (12) such that conductive bumps (26) on the integrated circuit component (20) perforate and extend through the film (18) and contact the bonding agent (14) in the via (22). Portions (44) displaced during perforation are received in the gap (28). The film (18) is thus interposed between the substrate (12) and the integrated circuit component (20). The preassembly (38) is then heated to bond the bonding agent (14) to the metal contact (24) and to cure the film (18) to form an integral assembly (10).

Method for forming a microelectronic assembly

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Forstinning, Germany

Conrad S Monroe