Infrared Newco, Inc.

Mc10, Inc.

Noble Peak Vision Corp.

Lucent Technologies Inc.

Agere Systems Inc.

Noble Devices Technologies

Conor S Rafferty

Clifford Alan King

Bryan D Ackland

Kevin Dowling

Benjamin Schlatka

Tirunelveli Subramaniam Sriram

Mitul Dalal

Steven Fastert

Anders Ingvar Aberg

Yung-Yu Hsu

Hans-Joachim Ludwig Gossmann

Isaiah Kacyvenski

Douglas Max Gill

Roozbeh Ghaffari

Glen D Wilk

Paul W Latham, Ii

Jason Sproul

Christi Kay Madsen

Milan S Raj

Jeffrey D Carbeck

Bryan Keen

Melissa Ceruolo

Tony E Haynes

Briana Morey

Ping-Hung Wei

Alexander Dickson

Henry Wei

Michael Philip Decelle

Ramki Kalyanaraman

Maria Lourdes Pelaz-Montes

Brian Reilly

Vincent C Venezia

Desmond R Lim

Conformal sensor systems and devices are used for sensing and analysis of data indicative of body motion, e.g., for such applications as training and/or clinical purposes. Flexible electronics technology can be implemented as conformal sensors for sensing or measuring motion (including body motion and/or muscle activity), heart rate, electrical activity, and/or body temperature for such applications as medical diagnosis, medical treatment, physical activity, physical therapy and/or clinical purposes. The conformal sensors can be used for detecting and quantifying impact, and can be used for central nervous system disease monitoring.

Conformal sensor systems for sensing and analysis

A system is provided for integrating conformal electronics devices into apparel. The system includes a flexible substrate onto which a flexible device is disposed. The flexible device can include a stretchable coil that can be used to receive and transmit near field communications. The flexible device also includes an integrated circuit component and a memory unit. In some examples, the device also includes a sensor that is configured to record measurement of the wearer of the apparel and/or the surrounding environment.

Conformal electronics integrated with apparel

Systems and methods are provided for the embedding of thin chips. A well region is generated in a substrate that includes a conductive material disposed on a flexible polymer. The standoff well region can be generated by pattern the conductive material, where the thin chip is embedded in the standoff well region. A cavity can be generated in the polymer layer to form a polymer well region, where the thin chip is embedded in the polymer well region.

Embedding thin chips in polymer

Apparatus are provided for monitoring a condition of a tissue based on a measurement of an electrical property of the tissue. In an example, the electrical property of the tissue is performed using an apparatus disposed above the tissue, where the apparatus includes at least two conductive structures, each having a non-linear configuration, where the at least two conductive structures are disposed substantially parallel to each other. In another example, the electrical property of the tissue is performed using an apparatus disposed above the tissue, where the apparatus includes at least one inductor structure.

Electronics for detection of a condition of tissue

In accordance with the invention, an improved image sensor includes an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.

Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry

A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods: (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions; (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor; (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field.

Low-noise semiconductor photodetectors

Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described.

Imaging apparatus and methods

Imaging arrays comprising at least two different imaging pixel types are described. The different imaging pixel types may differ in their light sensitivities and/or light saturation levels. Methods of processing the output signals of the imaging arrays are also described, and may produce images having a greater dynamic range than would result from an imaging array comprising only one of the at least two different imaging pixel types.

Imaging systems with multiple imaging pixel types and related methods

Imagers, pixels, and methods of using the same are disclosed for imaging in various spectra, such as visible, near infrared (IR), and short wavelength IR (SWIR). The imager may have an imaging array having pixels of different types. The different types of pixels may detect different ranges of wavelengths in the IR, or the SWIR, spectra. The pixels may include a filter which blocks some wavelengths of radiation in the IR spectrum while passing other wavelengths. The filter may be formed of a semiconductor material, and therefore may be easily integrated with a CMOS pixel using conventional CMOS processing techniques.

Growing community of inventors

Newtown, MA, United States of America

Conor S Rafferty