Nvmdurance Limited

National Digital Research Centre Limited

Emc IP Holding Company LLC

Conor Ryan

Joseph Sullivan

Anthony Gerard Ginty

Cline W Frasier

A method, system, and computer program product for increasing the life of a NAND flash, the method comprising selecting a set of internal control parameters for the NAND flash and optimizing the set of internal control parameters with a genetic algorithm to find an improved set of control parameters.

Optimization of flash storage

The present invention includes embodiments of systems and methods for increasing the operational efficiency and extending the estimated operational lifetime of a flash memory storage device (and its component flash memory chips, LUNs and blocks of flash memory) by monitoring the health of the device and its components and, in response, adaptively tuning the operating parameters of flash memory chips during their operational lifetime, as well as employing other less extreme preventive measures in the interim, via an interface that avoids the need for direct access to the test modes of the flash memory chips. In an offline characterization phase, 'test chips' from a batch of recently manufactured flash memory chips are used to simulate various usage scenarios and measure the performance effects of writing and attempting to recover (read) test patterns written with different sets of operating parameters over time (simulating desired retention periods).

Preventive measures for adaptive flash tuning

Waypoint generation for adaptive flash tuning

Candidate generation for adaptive flash tuning

Offline characterization for adaptive flash tuning

Adaptive flash tuning

The present invention is directed to a method for increasing the operational lifetime of a flash memory device, wherein, the method comprises varying the operating parameters of the flash memory device over the lifetime of the flash memory device. The advantage of providing a method which varies the operating parameters of a flash memory device is that the operational lifetime of the flash memory device will be increased. Relatively low voltages and relatively short voltage periods may be used initially to write to, read from and erase the flash cells in the flash memory device. As time passes, the flash cells in the flash memory device will begin to degrade and it will be necessary to increase the voltage and the period of the voltage applied to the flash memory device in order to ensure that the correct write, read and/or erase commands are carried out. The invention is also directed towards a flash memory device.

Adusting flash memory operating parameters based on historical analysis of multiple indicators of degradation

System and methods for extending operational lifetime of flash memory

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Limerick, Ireland

Conor Ryan