Texas Instruments Corporation

Connie Alagadan Esteron

Dolores Babaran Milo

Jerry Gomez Cayabyab

In a described example, a method includes: forming a metal layer on a backside surface of a semiconductor wafer, the semiconductor wafer having semiconductor dies spaced apart by scribe lanes on an active surface of the semiconductor wafer opposite the backside surface; forming a layer with a modulus greater than about 4000 MPa up to about 8000 MPa over the metal layer; mounting the backside of the semiconductor wafer on a first side of a dicing tape having an adhesive; cutting through the semiconductor wafer, the metal layer, and the layer with a modulus greater than about 4000 MPa up to about 8000 MPa along scribe lanes; separating the semiconductor dies from the semiconductor wafer and from one another by stretching the dicing tape, expanding the cuts in the semiconductor wafer along the scribe lanes between the semiconductor dies; and removing the separated semiconductor dies from the dicing tape.

Semiconductor die singulation

Apparatus to store singulated wafers for transport, including multiple wafer assemblies stacked in the interior of a container housing, the individual wafer assemblies including an expanded laser diced wafer singulated into dies, a first frame spaced outward from the wafer on a carrier structure, a second frame spaced outward from the wafer and inward from the first frame on the carrier structure, and a foam structure that supports the second frame and the carrier structure.

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Laoac Pangasinan, Philippines

Connie Alagadan Esteron