General Electric Company

United States of America As Represented by the Secretary of the Air Force

Conilee G Kirkpatrick

George E Possin

Harold G Parks

Michael S Adler

James F Norton

Virgil L Stout

A beam-addressed memory system for digital memory recording and reading which comprises an electron beam generating and focusing subsystem, an electron detecting subsystem, electronic control and interface circuit means, and a storage medium consisting essentially of a cross-linkable polymeric film having an implanted surface layer of heavy metal ions.

Beam addressed memory system

The amount of charge written into the insulator layer of an electron-beam-addressed metal-insulator-semiconductor target is increased by increasing the number of defects in the insulator to provide additional charge trapping and storage sites. Ion implantation techniques for accomplishing the increase of charge trapping sites are disclosed.

Method for improving writing of information in memory targets

One of a multiplicity of data values is permanently recorded at each data site in a two-dimensional data site array defined upon the surface of a semiconductor diode target by implanting an auxiliary bit thereat having an associated one of a multiplicity of possible dopant concentrations, at a uniform implantation depth, or of different implantation depths, at a uniform doping concentration, into a fabricated layer of the diode, responsive to respectively controlling the fluence or the landing energy of a writing ion beam.

Methods of gray scale recording and archival memory target produced

A method for storing data in an archival memory semiconductor target by inducing damage to the semiconductor lattice at selected ones of a plurality of storage sites arranged as a two-dimensional array upon a surface of the target. Ions are accelerated and collimated as a beam to impinge upon a target surface to induce the damage to a controlled depth, whereby subsequent illumination of a damaged data site by an electron beam will allow the beam-produced electron-hole pairs to recombine within the damaged area to prevent increased current flow and read a binary zero bit, while hole migrations through a target depletion region will cause increased current flow, at an undamaged data site, to indicate a binary one data bit.

Method for writing on archival memory target by ion damage

A memory plane for an archival, non-volatile mass storage memory has a planar semiconductor diode with each of a plurality of small P-N junction diodes alloyed into the surface of its fabricated layer responsive to a selectively-actuated scanned energy beam at each location corresponding to a first binary value in a planar array of data sites. Formation of a P-N junction is prevented at each of the remaining sites of the planar data array to provide storage of data having the remaining binary value. Several alternative methods for formation of the alloy junction surface diodes are disclosed.

Alloy junction archival memory plane and methods for writing data thereon

A non-volatile archival memory storage media has a planar junction diode structure into which are written a plurality of diode bits permanently formed at or beneath the top surface thereof by selective ion implantation. Each of the plurality of ion implanted regions represents a data bit of a first binary value, with the remaining un-implanted regions of the planar diode representing data bits of the remaining binary value. The permanently stored data is read by inducing a flow of current by recombination phenomena responsive to a scanning electron beam sequentially incident on each of the possible data bit sites of an array of such sites in the planar diode. Wide bandwidth methods for writing the ion implantation sites into the planar diode media are disclosed.

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Schenectady, NY, United States of America

Conilee G Kirkpatrick