Chinese Academy of Sciences

Congyan Lu

Ming Liu

Ling Li

Wei Wang

Nianduan Lu

Di Geng

Lingfei Wang

Xuewen Shi

Guangwei Xu

Xinlv Duan

Zhiheng Han

A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.

Pressure sensor based on zinc oxide nanowires and method of manufacturing pressure sensor

A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes. The invention has the advantages of reasonable theory, accurate result, simple and easy operation, and is favorable for optimizing the device performance and establishing a complete electrical model of the device.

Method for obtaining a contact resistance of a planar device

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Beijing, China

Congyan Lu