Western Digital Technologies, Inc.

Siemens Aktiengesellschaft

Shanghai Huali Integrated Circuit Corporation

Sandisk Technologies Inc.

Sandisk Information Technology (shanghai) Co., Ltd.

Cong Zhang

Chin-Tien Chiu

Xuyi Yang

Yazhou Zhang

Fuqiang Xiao

Hope Chiu

Zengyu Zhou

Chien Te Chen

Qi Deng

Yu Ying Tan

Kuo-Chien Wang

Yuyang Bian

Lei Shi

Ning Ye

Hua Fang Tan

Han-Shiao Chen

Jun Zhu

Junrong Yan

Yangming Liu

Chin Tien Chiu

Weili Wang

Bo Yang

Jiandi Du

Fen Yu

Xiaobo Guo

Shineng Ma

Xin Lu

Weiting Jiang

Shenghua Huang

Xiaofeng Di

Simon Dong

Elley Zhang

Jerry Tang

Hsiang Ju Huang

Hsiao Jung Lin

CheeKeong Chin

Honny Chen

Rosy Zhao

Chieh Kai Yang

Gary Zheng

Chaur Yang Ng

Chenlin Yang

Emma Wang

Linda Huang

Juan Zhou

Joyce Chen

Lynn Lin

Haijun Wu

Lulu Lai

Ada Shen

A semiconductor device having one or more bifacial semiconductor wafers. The bifacial semiconductor wafer includes a first array of semiconductor dies on a first planar surface and a second array of semiconductor dies on a second planar surface that is opposite the first planar surface. The first array of semiconductor dies are electrically coupled via a first redistribution layer and the second array of semiconductor dies are electrically coupled via a second redistribution layer. One or more through silicon vias electrically couple the first array of semiconductor dies with the second array of semiconductor dies.

Bifacial semiconductor wafer

Systems, methods, and devices for 3D packaging. In some embodiments, a semiconductor package includes a first die and a second die. The first die includes a first bonding pad on a top of the first die and near a first edge of the first die. The second die includes a second bonding pad on a top of the second die and near a second edge of the second die. A pillar is located on the second bonding pad. The first die is mounted on top of the second die such that the first edge is parallel to the second edge and offset from the second edge such that the pillar is exposed. A wire is bonded to a bonding surface of the pillar and bonded to a bonding surface of the first bonding pad.

Wire bond pad design for compact stacked-die package

A semiconductor device includes a substrate, semiconductor dies on the substrate, molding compound and a reinforcing layer suspended within the molding compound. The reinforcing layer may for example be a copper foil formed in the molding compound over the semiconductor dies during the compression molding process. The reinforcing layer may have a structural rigidity which provides additional strength to the semiconductor device. The reinforcing layer may also be formed of a thermal conductor to draw heat away from a controller die within the semiconductor device.

Semiconductor device including a suspended reinforcing layer and method of manufacturing same

A substrate of an electronic device includes a first set of contact pads and a first set of contact pillars having a height greater than the first set of contact pads. Components are coupled to the first set of contact pads and the first set of contact pillars in traversing directions. The components coupled to the contact pillars are positioned above the components coupled to the first set of contact pads such that at least a first portion of a first side of the component coupled to the contact traces faces a first side of the components coupled to the contact pillars. Stacking passive components in this manner can allow for increased component density without increasing package size.

Printed circuit board with stacked passive components

A semiconductor device package includes a first substrate having an electrical circuit, semiconductor dies stacked one on top of the other, and bond wires electrically connected one to another. The bond wires electrically couple the semiconductor dies to one another and to the electrical circuit. There is a first bond wire having a first portion connected to a first semiconductor die, a second portion connected to a second semiconductor die, and an intermediate portion between the first portion and second portion. The semiconductor device package further includes a molding compound encapsulating the semiconductor dies, and the first and second portions of the first bond wire. The intermediate portion of the first bond wire is exposed along a top planar surface of the molding compound. The semiconductor device package may be used for coupling one or more other semiconductor device packages thereto via the exposed intermediate portion.

Semiconductor device package with exposed bond wires

A surface mount device having features on contacts to prevent the surface mount device from tombstoning. The feature may be channel defined by the contact that helps balance a torque/force applied on each side of the surface mount device during a reflow soldering process. The feature may also be a solder mask that helps balance a torque/force applied on each side of the surface mount device during a reflow soldering process.

Tombstone prevention for a surface mount device

The present application provides a method for improving overlay metrology accuracy of self-aligned multiple patterning, overlay metrology pattern comprising a front layer pattern and a current layer pattern, the front layer pattern comprising a plurality of first grating structures overlaid on the periphery of the current layer pattern, the first grating structure being composed of a plurality of repeatedly arranged strip elements; segmenting the strip element in the first grating structure, so that each of the strip elements forms a sub-grating structure comprising a plurality of repeatedly arranged strip structures; forming a plurality of repeatedly arranged core structures corresponding to the plurality of repeatedly arranged strip structures; form a gate structure comprising a plurality of repeatedly arranged fin structures; removing two outermost fin structures of the gate structure; the gate structure and the current layer pattern structure together forming an overlay metrology structure.

Method for improving overlay metrology accuracy of self-aligned multiple patterning

A semiconductor device includes a vertical column of wire bonds on substrate contact fingers of the device. Semiconductor dies are mounted on a substrate, and electrically coupled to the substrate such that groups of semiconductor dies may have bond wires extending to the same contact finger on the substrate. By bonding those wires to the contact finger in a vertical column, as opposed to separate, side-by-side wire bonds on the contact finger, an area of the contact finger may be reduced.

Semiconductor device including vertical wire bonds

A semiconductor device package includes a substrate, a heat-generating component positioned on a surface of the substrate, and an encapsulant at least partially covering the heat-generating component and having an outer surface. A first heat-conducting layer is disposed between the encapsulant and the first heat-generating component. One or more pillars are in contact with the first heat-conducting layer and extend to the outer surface of the encapsulant and contact a second heat-conducting layer disposed on the outer surface of the encapsulant.

Semiconductor device package having thermally conductive layers for heat dissipation

A substrate-less integrated electronic element module for a semiconductor package, comprising: at least two electronic elements, each of the at least two electronic elements having first electrical connectors; and a first molding compound encapsulating the at least two electronic elements, the first molding compound comprising a first planar surface and an opposing second planar surface of the integrated electronic element module, wherein each of the first electrical connectors is directly exposed on the first planar surface of the integrated electronic element module. Further, a semiconductor package including the integrated electronic element module and the method of fabricating the same is provided.

Integrated electronic element module, semiconductor package, and method for fabricating the same

Charger for electric vehicle

The present application provides a dynamic illumination method based on a scan exposure machine, providing a mask used for exposure and a GDS file corresponding to the mask; dividing pattern information on the mask into n areas with the same width along the direction of movement of the mask during the exposure; performing SMO computation on the pattern information in the n areas, so as to generate n SMO files corresponding to the n areas respectively; performing combinatorial optimization on the n SMO files to obtain a DSMO file; generating a driver of a light source reflector array according to the DSMO file, the illumination; and controlling a reflector array of an exposure machine by calling the driver of the light source reflector array. The DSMO method is performed in each exposure slit area, so as to improve the illumination optimization for a pattern.

Dynamic illumination method based on scan exposure machine

A semiconductor device is disclosed including one or more stacks of semiconductor dies vertically molded together in an encapsulated block. The semiconductor dies may comprise memory dies, or memory dies and a controller die.

Semiconductor device including vertically stacked semiconductor dies

A semiconductor device is disclosed including wafers of stacked integrated memory modules. A semiconductor device of the present technology may include multiple memory array semiconductor wafers, and a CMOS controller wafer, which together, operate as a single, integrated flash memory semiconductor device. In embodiments, the CMOS controller wafer may include semiconductor dies comprising ASIC logic circuits integrated together with memory array logic circuits.

High capacity semiconductor device including bifurcated memory module

A semiconductor device is disclosed including a multi-module interposer for enabling communication between one or more semiconductor dies within the device and a host device on which the semiconductor device is mounted. The multi-module interposer may be formed at the wafer level, and provides fan-out signal paths to and from the one or more dies in the device. Additionally, the multi-module interposer allows any of a variety of different semiconductor packaging configurations to be formed at the wafer level, including for example wire bonded packages, flip chip packages and through silicon via (TSV) packages.

Multi-module integrated interposer and semiconductor device formed therefrom

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Shanghai, China

Cong Zhang