Applied Materials, Inc.

Cong Trinh

Mihaela A Balseanu

Maribel Maldonado-Garcia

Ning Li

Li-Qun Xia

Wenbo Yan

Mark Joseph Saly

Bhaskar Jyoti Bhuyan

Victor Nguyen

John Leonard Sudijono

Michael G Haverty

Alexander Viktorovich Garachtchenko

Keenan Navarre Woods

Lisa J Enman

Muthukumar Kaliappan

Richard Ming Wah Wong

Yingqian Chen

Rongjun Wang

Yixiong Yang

Tsutomu Tanaka

Yu Lei

Kevin Griffin

Sahil Patel

Yi Xu

Kenric T Choi

Wei Lei

Chih-Hsun Hsu

Aixi Zhang

Xingyao Gao

Shiyu Yue

Chandan Kr Barik

Ju Hyun Oh

Anil Kumar Tummanapelli

Zohreh Razavi Hesabi

Vipin Jose

Saloni Sawalkar

Kendrick H Chaney

Abulaiti Hairisha

A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.

One chamber multi-station selective metal removal

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Methods and apparatus for low temperature silicon nitride films

Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Thin layer deposition with plasma pulsing

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SiN) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SiN) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Chalcogen precursors for deposition of silicon nitride

An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

Control of liquid delivery in auto-refill systems

Silyl pseudohalides having a general formula of RSiX, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

Silyl pseudohalides for silicon containing films

Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.

Low temperature silicon nitride/silicon oxynitride stack film with tunable dielectric constant

Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

Multilayer encapsulation stacks by atomic layer deposition

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250&#xb0; C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Processes for depositing SiOfilms on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

High temperature silicon oxide atomic layer deposition technology

Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

Accurate film thickness control in gap-fill technology

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Santa Clara, CA, United States of America

Cong Trinh