Sarnoff Corporation

Sarnoff Europe

Sarnoff Europe Bvba

Cong-Son Trinh

John Armer

Markus Paul Josef Mergens

Phillip Czeslaw Jozwiak

Russell Mohn

Cornelius Christian Russ

Koen Gerard Maria Verhaege

A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area) within a given SCR area, i.e., effectively increasing the SCR width. Increasing the physical SCR area, increases the current handling capabilities of the SCR.

Two-dimensional silicon controlled rectifier

A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device that can protect very sensitive thin gate oxides by limiting the power dissipation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment, the invention provides very low triggering and holding voltages. Furthermore, the SOI protection device of the present invention has low impedance and low power dissipation characteristics that reduce voltage build-up, and accordingly, enable designers to fabricate more area efficient protection device

Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies

Growing community of inventors

Meaux, France

Cong-Son Trinh