Analog Devices,inc.

Colm Donovan

Eduardo M Martinez

Santiago Iriarte

Alberto Marinas

Christian Jimenez

Javier Alejandro Salcedo

Jose Ibanez Climent

Jose Ibanez-Climent

An apparatus and method for determining characterizing attributes of an actuator is provided. An actuator may be moved to a maximum capacitance position. At the maximum capacitance position, an initial measurement of the actuator capacitance is made. The actuator is moved a predetermined increment toward a first extreme position, and the actuator capacitance is again measured. If the capacitance changed by a threshold amount, the signal preceding the signal that caused the actuator to move is recorded as an approximate response curve end point, or the first extreme position. The actuator is again moved a predetermined increment toward a second extreme position. After each move, the capacitance is measured. If it is determined the capacitance did change by a threshold amount from the previously measured capacitance, the signal related to the previously measured capacitance is recorded as an approximate response curve end point, or the second extreme position.

Automatic characterization of an actuator based on capacitance measurement

A reference voltage generator circuit may include at least one MOS transistor and at least one bipolar transistor coupled together to provide an electrical path from an input reference potential to an output of the generator circuit. The electrical path may extend through a gate-to-source path of the MOS transistor and further through a base-to-emitter path of the bipolar transistor. The MOS transistor may be biased by a bias current that is proportional to T&#xb7;&#x3bc;(T), where T represents absolute temperature and &#x3bc;(T) represents mobility of a MOS transistor in the bias current generator. Optionally, the reference voltage generator may include N MOS and M multiple bipolar transistors (N&#x2267;1, M&#x2267;1), and the output reference voltage may be N*V+M*Vas compared to the input reference potential.

Reference voltage generators for integrated circuits

Metal oxide semiconductor (MOS) protection circuits and methods of forming the same are disclosed. In one embodiment, an integrated circuit includes a pad, a p-type MOS (PMOS) transistor, and first and second n-type MOS (NMOS) transistors. The first NMOS transistor includes a drain, a source and a gate electrically connected to the pad, a first supply voltage, and a drain of the PMOS transistor, respectively. The second NMOS transistor includes a gate, a drain, and a source electrically connected to a bias node, a second supply voltage, and a source of the PMOS transistor, respectively. The source of the second NMOS transistor is further electrically connected to a body of the PMOS transistor so as to prevent a current flowing from the drain of the PMOS transistor to the second supply voltage through the body of PMOS transistor when a transient signal event is received on the pad.

Circuit architecture for metal oxide semiconductor (MOS) output driver electrical overstress self-protection

A detection circuit is coupled to an output terminal of a driver circuit. The detection circuit includes a comparator to compare a signal at the output terminal to a reference signal corresponding to a signal that would be generated if a capacitive load having a relatively high capacitance value were connected to the output terminal. Output of the comparator is sampled at a predetermined time after the driver circuit provides the drive signal. An error signal is generated when the sampled output indicates that the capacitive load having the relatively high capacitance value is actually connected to the output terminal.

Protection circuit for driving capacitive loads

A system for a Class AB Amplifier output stage that includes a first push pull system connected to an output terminal including a first driving transistor coupled to the output terminal and a second push pull system connected to the output terminal including a second driving transistor coupled to the output terminal. The amplifier also includes a current mode amplifier where the current mode amplifier's output is coupled to the first driving transistor's gate. The amplifier further includes a pair of resistors, a first resistor coupled to a first input terminal of the current mode amplifier, a second resistor coupled to a second input terminal of the current mode amplifier and coupled to the second driving transistor.

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Valencia, Spain

Colm Donovan