Ge Aviation Systems Limited

Collin William Hitchcock

Ljubisa D Stevanovic

Stacey J Kennerly

A semiconductor device cell includes a semiconductor layer having a surface defining a series of parallel striations extending in a first direction. The semiconductor layer surface has a lower electrical resistance in the first direction than in a second direction orthogonal to the first direction. A channel region defines a set of first channel region segments extending in the first direction, and a set of second channel region segments extending in the second direction. The first channel region segments and the second channel region segments are arranged to maximize portions of the channel region extending in the first direction across the surface, and minimize portions of the channel region extending in the second direction, to reduce or minimize the effective electrical resistance of the channel region in operation.

Semiconductor switching device

A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent to the well region and surrounded by the well region. A channel region having the second conductivity type, and defining a set of channel region segments a periphery of the channel region segment being surrounded by the well region. The well region, source region, and channel region cooperatively define a first axial length extending across the surface.

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Clifton Park, NY, United States of America

Collin William Hitchcock