International Business Machines Corporation

Other

Siemens Aktiengesellschaft

Colleen M Snavely

Yun Yu Wang

Ravikumar Ramachandran

Johnathan E Faltermeier

Viraj Yashawant Sardesai

David M Dobuzinsky

Philip L Flaitz

Susan L Cohen

Michael Maldei

Tor W Moksvold

Michael M Iwatake

Ronald Hoyer

Ching-Tzuen Tarn

Lisa Y Ninomiya

John Altieri

Russ Arndt

In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluric acid (DHF) clean are affected. Amorphous silicon is deposited and an anneal is performed to regrow and recrystallize amorphous silicon.

Method to enhance epitaxial regrowth in amorphous silicon contacts

A method for forming silica stain on a substrate to facilitate monitoring of the silica stain during integrated circuit manufacture. The method includes providing a silica stain test structure which has a silicon substrate, a hydrophilic silicon dioxide containing layer disposed above the silicon substrate, and a plurality of cavities formed in the silicon substrate through the silicon dioxide containing layer. The cavities have hydrophobic sidewalls. The method also includes exposing the silica stain test structure to deionized water, and drying the silica stain test structure to form the silica stain on the silicon dioxide containing layer.

Method for making silica strain test structures

A lateral PNP bipolar transistor includes concentric circular emitter and annular base and dual collector regions. The inner collector region is moderately doped to provide good punch-through and Early voltage performance. The outer collector region is highly doped to provide low collector series resistance. A composite transistor made up of any desired number of individual transistors provides a transistor having a desired current capacity. The transistor annular base cross-section permits very accurate base width control during the manufacturing process.

Method for forming a lateral bipolar transistor with dual collector,

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Manassas, VA, United States of America

Colleen M Snavely