Agate Logic, Inc.

Cswitch Corporation

Colin Neal Murphy

Malcolm J Wing

Dana How

Godfrey P D'Souza

Louis Charles Kordus, Ii

Arun Jangity

Vei-Han Chan

Antonietta Oliva

Narbeh Derharcobian

Jason Golbus

Narbeh Derhacobian

Alexander Dougald Taylor

Jay B Patel

Robert K Yu

Pohrong Rita Chu

Douglas A Laird

Thomas E Stewart

Ivo J Dobbelaere

Mukunda Krishnappa

Suresh Subramaniam

Dave Trossen

Kevin James

Thomas Stewart, Jr

A bus structure providing pipelined busing of data between logic circuits and special-purpose circuits of an integrated circuit, the bus structure including a network of pipelined conductors, and connectors selectively joining the pipelined conductors between the special-purpose circuits, other pipelined connectors, and the logic circuits.

High-bandwidth interconnect network for an integrated circuit

A multi-terminal electromechanical nanoscopic switching device which may be used as a memory device, a pass gate, a transmission gate, or a multiplexer, among other things.

Multi-terminal electromechanical nanocsopic switching device with control and release electrodes

A system for general purpose input-output (IO), including a first pad; an IO buffer comprising the first pad; and an IO datapath logic block operatively connected to the IO buffer, where the IO datapath logic block and the IO buffer are associated with a general purpose IO block in a heterogeneous configurable integrated circuit (HCIC).

General purpose input/output system and method

Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.

Reconfigurable logic structures

Content-addressable memory (CAM) cells comprised of phase change material devices (PCMDs), including PCMD-based binary CAM cells (PCMD-based BCAM cells), PCMD-based ternary CAM cells (PCMD-based TCAM cells), and PCMD-based universal CAM cells (PCMD-based UCAM cells). The PCMDs of the various PCMD-based CAM cells are configured and programmed in a manner that allows a logic '0' or a logic '1' to be stored by the CAM cell. The logic value stored by a given PCMD-based CAM cell depends on the program states of the PCMDs. A program state of a PCMD is determined by whether the phase change material of the PCMD has been allowed to solidify to a crystalline, low-resistance state during a programming operation, or whether the phase change material of the PCMD is forced to solidify to an amorphous, high-resistance state during the programming operation.

Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM

A system including a plurality of programmable logic blocks, a plurality of special-purpose blocks, and a configurable high-speed mesh interconnect fabric operatively connecting the plurality of programmable logic blocks and the plurality of special-purpose blocks, where the configurable high-speed mesh interconnect fabric is configured to implement a plurality of interconnect pipeline buses spanning across the system.

Heterogeneous configurable integrated circuit

Growing community of inventors

Belmont, CA, United States of America

Colin Neal Murphy