Freescale Semiconductor,inc.

Nxp Usa, Inc.

Colin McAndrew

Brandt Braswell

Robert S Jones, Iii

Tao Chen

Michael J Zunino

An integrated circuit including a segmented successive approximation register (SAR) analog-to-digital converter (ADC) includes a first capacitive structure with a first plurality of capacitive structure subcomponents that each include a first terminal selectively connected to one of a plurality of input voltage nodes and a second terminal connected to a common conductor, and second capacitive structure with a second plurality of capacitive structure subcomponents that each include a first terminal selectively connected to one of the plurality of input voltage nodes and a second terminal connected to the common conductor. The first and second plurality of capacitive structure subcomponents are arranged in an array in which none of the first plurality of capacitive structure subcomponents are directly adjacent to one another and none of the second plurality of capacitive structure subcomponents are directly adjacent to one another in a first row in the array.

Optimized arrays for segmented successive-approximation-register (SAR) analog-to-digital converter (ADC)

A semiconductor device comprises a plurality of transistor mismatch circuits formed on a semiconductor wafer; and a characterization circuit formed on the semiconductor wafer. The characterization circuit is coupled to receive input provided by the absolute value circuits simultaneously which themselves receive inputs from the mismatch circuits simultaneously and is configured to output a standard deviation of mismatch between transistors in the mismatch circuits.

MOFSET mismatch characterization circuit

A semiconductor device comprising a first inverter circuit including a first PMOS transistor and a first NMOS transistor, a drain electrode of the first PMOS transistor coupled to a drain electrode of the first NMOS transistor, and a second inverter circuit including a second PMOS transistor and a second NMOS transistor, a drain electrode of the second PMOS transistor coupled to a drain electrode of the second NMOS transistor. A first output voltage pad coupled to gate electrodes of the first and second PMOS and NMOS transistors, and between the drain electrode of the first PMOS transistor and the drain electrode of the NMOS transistor to self-bias the first inverter circuit. A second output voltage pad coupled between the drain electrode of the second PMOS transistor and the drain electrode of the second NMOS transistor.

Growing community of inventors

Phoenix, AZ, United States of America

Colin McAndrew