Applied Materials, Inc.

The Boc Group, Inc.

Other

Colin John Dickinson

Michael Santiago Cox

Brian T West

Rongping Wang

Roger M Johnson

Daniel O Clark

Mehran Moalem

Zheng Yuan

Paul E Fisher

Yutaka Tanaka

Monique McIntosh

Kartik Bhupendra Shah

Vishwas Kumar Pandey

Ala Moradian

Peter Martin Pozniak

Frank Jansen

Dinkesh Huderi Somanna

Daimhin Paul Murphy

Jess J Noble

Ray Carnahan

Olivier J Blachier

Penny Dickinson

Robert N Mundell

Michael A Maddux

An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

Apparatus for temperature control in a substrate processing chamber

Implementations of the present disclosure relate to systems for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a system is provided that includes a water and oxygen delivery system. The water and oxygen delivery system includes a water vapor reagent source fluidly coupled with a chamber foreline via a first conduit; and an oxygen reagent source fluidly coupled with the chamber foreline via a second conduit fluidly coupled with the first conduit. The system further includes a plasma source fluidly coupled with the water and oxygen delivery system via the chamber foreline.

Plasma abatement system utilizing water vapor and oxygen reagent

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH, HO, H, NF, SF, F, HCl, HF, Cl, and HBr. Representative condensing abating reagents include, for example, H, HO, O, N, O, CO, CO, NH, NO, CH, and combinations thereof.

Plasma abatement of compounds containing heavy atoms

Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, a method for treating an exhaust gas in an exhaust conduit of a substrate processing system includes: flowing an exhaust gas from a process chamber into a plasma source via a foreline; injecting a reagent into the foreline; forming a plasma in the plasma source from the exhaust gas and the reagent; and injecting a cleaning gas into the foreline, wherein the cleaning gas and the reagent are different gases.

Apparatus for treating exhaust gas in a processing system

The present disclosure relates to methods and apparatus for treating vacuum processing system exhaust gases. In addition, methods and apparatus for maintenance of foreline plasma reactor subsystems are disclosed. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a vacuum processing system includes a plasma source coupled with a foreline of a process chamber, a treatment agent source coupled with the plasma source, and a downstream trap to cool an exhaust stream and trap particles in the exhaust stream. In some embodiments, multiple foreline plasma reactor subsystems are used with a vacuum processing system, and one foreline plasma reactor subsystem can be isolated and maintained (e.g., cleaned) while exhaust gas treatment continues in another foreline plasma reactor subsystem and processing continues in the vacuum processing system.

Plasma foreline thermal reactor system

Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, a method for treating an exhaust gas in an exhaust conduit of a substrate processing system includes: flowing an exhaust gas and a reagent gas into an exhaust conduit of a substrate processing system; injecting a non-reactive gas into the exhaust conduit to maintain a desired pressure in the exhaust conduit for conversion of the exhaust gas; and forming a plasma from the exhaust gas and reagent gas, subsequent to injecting the non-reactive gas, to convert the exhaust gas to abatable byproduct gases.

Methods for treating exhaust gas in a processing system

Implementations of the present disclosure relate to systems and techniques for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. The water and oxygen delivery system comprises a housing that includes a floor and a plurality of sidewalls that define an enclosed region. The water and oxygen delivery system further comprises a cylindrical water tank positioned on the floor, wherein a longitudinal axis of the cylindrical water tank is parallel to a plane defined by the floor and a length of the water tank is 1.5 times or greater than the diameter of the cylindrical water tank. The water and oxygen delivery system further comprises a flow control system positioned within the housing above the cylindrical water tank.

Plasma abatement technology utilizing water vapor and oxygen reagent

Embodiments disclosed herein include a plasma abatement process that takes effluent from a processing chamber and reacts the effluent with water vapor reagent within a plasma source placed in a foreline by injecting the water vapor reagent into the foreline or the plasma source. The materials present in the effluent as well as the water vapor reagent are energized by the plasma source, converting the materials into gas species such as HF that is readily scrubbed by typical water scrubbing abatement technology. An oxygen containing gas is periodically injected into the foreline or the plasma source relative to the water vapor injection to reduce or avoid the generation of solid particles. The abatement process has good destruction removal efficiency (DRE) with minimized solid particle generation.

Plasma abatement solids avoidance by use of oxygen plasma cleaning cycle

Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

Method of cooling a composition using a hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system

Apparatus and methods that provide a reagent gas in a foreline abatement system are provided herein. In some embodiments, a reagent delivery system includes a water tank having an inner volume that holds a reagent liquid when disposed therein, and a heat exchanger having a central opening disposed in the inner volume and configured to keep a top surface of the reagent liquid from freezing when reagent liquid is disposed within the water tank.

Reagent delivery system freeze prevention heat exchanger

In some embodiments an apparatus for treating an exhaust gas in a foreline of a substrate processing system may include a dielectric tube configured to be coupled to the foreline of the substrate processing system to allow a flow of exhaust gases from the foreline through the dielectric tube; an RF coil wound about an outer surface of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube; a tap coupled to the RF coil to provide an RF return path, the tap disposed between the first end of the dielectric tube and a central portion of the dielectric tube.

Apparatus for treating an exhaust gas in a foreline

Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a plasma source coupled to a foreline of a process chamber, a reagent source coupled to the foreline upstream of the plasma source, and a foreline gas injection kit coupled to the foreline to controllably deliver a gas to the foreline, wherein the foreline injection kit includes a pressure regulator to set a foreline gas delivery pressure setpoint, and a first pressure gauge coupled to monitor a delivery pressure of the gas.

Methods and apparatus for treating exhaust gas in a processing system

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

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San Jose, CA, United States of America

Colin John Dickinson