Hewlett-packard Development Company, L.p.

Samsung Electronics Co., Ltd.

Hewlett-packard Company

Colin Andrew Stobbs

Thomas C Anthony

Sarah Morris Brandenberger

Andrew M Spencer

Anthony Peter Holden

Jonathan Jedwab

Steven C Johnson

Judy Bloomquist, Legal Representative

Connie Lemus

Susan Mf Davis

Manoj K Bhattaharyya

A memory assembly comprises a substrate that incorporates magnetic shielding, a magnetic random access memory die supported by the substrate, and an encapsulation matrix that includes magnetic shielding that is disposed over the magnetic random access memory die.

Magnetic shielding for magnetic random access memory

A memory device includes a first surface having memory chips disposed thereon, the memory chips defining an exterior face of the memory device, and a second surface opposite the exterior face. A magnetically permeable shield layer extends over at least one of the exterior face and the second surface of the memory device.

Magnetic memory device

A storage device including a magnetic memory and a control circuit. The control circuit is configured to transfer selected data from the magnetic memory a selected number of times and to regulate the transfer of the selected data from the magnetic memory subsequent to transferring the selected data from the magnetic memory the selected number of times.

Magnetic memory storage device

A memory card includes at least one magnetic random access memory supported by a substrate, and a memory card cover disposed over the magnetic random access memory and the substrate to form a memory card, wherein at least one of the substrate and the memory card cover includes magnetic shielding to at least partially shield the magnetic random access memory from external magnetic fields, the memory card cover forming an external portion of the memory card.

Magnetic shielding for magnetic random access memory card

The present disclosure relates to a solid-state storage device. In one arrangement, the storage device comprises a memory device comprising one of an atomic resolution storage (ARS) device and a magnetic random access memory (MRAM) device, a controller, and an integral connector that is used to directly connect the storage device to another device.

Direct connect solid-state storage device

A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200&deg; C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is keep below about 180&deg; C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.

Low temperature system for attaching magnetoresistive random access memory (MRAM)

A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200&deg; C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is kept below about 180&deg; C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.

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Eagle, ID, United States of America

Colin Andrew Stobbs