Micron Technology Incorporated

Cole S Franklin

Thomas R Omstead

Tuman Earl Allen, Iii

Zhe Song

Dan Gealy

F Daniel Gealy

Jerome A Imonigie

A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Semiconductor structures including liners comprising alucone and related methods

A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.

Methods of forming silicon-containing dielectric materials and methods of forming a semiconductor device comprising nitrogen radicals and oxygen-containing, silicon-containing, or carbon-containing precursors

Semiconductor device structures including silicon-containing dielectric materials

Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed.

Compositions for removing residues and related methods

Methods of forming silicon-containing dielectric materials and semiconductor device structures

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Boise, ID, United States of America

Cole S Franklin