International Business Machines Corporation

Globalfoundries Inc.

Globalfoundries U.S. Inc.

Cole E Zemke

Wayne Harvey Woods, Jr

Jeffrey G Hemmett

Ning Lu

Judith H McCullen

David James Hathaway

John Maxwell Cohn

Jason D Hibbeler

Ulrich Alfons Finkler

Fook-Luen Heng

Mukesh Kumar

Lewis William Dewey, Iii

Tamilmani Ethirajan

Wenjun Li

Arnold E Baizley

Wayne H Woods

Gie Lee

Ralph M Alfano

Chen Perkins Yan

The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.

Cascode cell

Disclosed are a system and a method for integrated circuit (IC) performance modeling, wherein a design layout of an IC is analyzed to identify a first conductive shape (e.g., an internal local interconnect or contact bar shape) on a diffusion boundary shape of a semiconductor device and to also identify the first conductive shape's connectivity to any second conductive shapes (e.g., a via, via bar, or external local interconnect shapes) inside and/or outside the limits of the diffusion boundary shape. A condensed resistance model for the first conductive shape is selected from a model library based on the previously identified connectivity. The selected condensed resistance model will have a lesser number of nodes and/or resistive elements than a full resistance model for the conductive shape. The selected condensed resistance model is used to construct a condensed netlist, which is used in a combined netlist to simulate IC performance.

Integrated circuit performance modeling using a connectivity-based condensed resistance model for a conductive structure in an integrated circuit

A method calculates a total source/drain resistance for a field effect transistor (FET) device. The method counts the number (N) of contacts in each source/drain region of the FET device, partitions each source/drain region into N contact regions and calculates a set of resistances of elements and connections to the FET device. The measured dimensions of widths, lengths, and distances of layout shapes forming the FET and the connections to the FET are determined and a set of weights based on relative widths of the contact regions are computed. The total source/drain resistance of the FET device is determined by summing products of the set of resistances and the set of weights for each of a plurality of contacts in series, the summing being performed for all of the plurality of contacts in one of a source region and a drain region of the FET. A netlist is formed based on the total source resistance and total drain resistance of the FET device.

Method of determining FET source/drain wire, contact, and diffusion resistances in the presence of multiple contacts

Methods for modeling a random variable with spatially inhomogenous statistical correlation versus distance, standard deviation, and mean by spatial interpolation with statistical corrections. The method includes assigning statistically independent random variable to a set of seed points in a coordinate frame and defining a plurality of test points at respective spatial locations in the coordinate frame. A equation for a random variable is determined for each of the test points by spatial interpolation from one or more of the random variable assigned to the seed points. The method further includes adjusting the equation of the random variable at each of the test point with respective correction factor equations.

Method of distributing a random variable using statistically correct spatial interpolation continuously with spatially inhomogeneous statistical correlation versus distance, standard deviation, and mean

A method of linking on-chip parasitic coupling capacitance into distributed pre-layout passive models such as distributed transmission line models and on-chip spiral inductor models includes recognizing a passive device such as a distributed transmission line device and an on-chip spiral inductor device, interpreting data obtained from the recognizing the passive device, breaking the passive device into a plurality of sections, the plurality of sections including a terminal of a model call, extracting parameters of the passive device by Layout Versus Schematic (LVS) and parasitic extraction, connecting the terminal to a pre-layout passive network by selectively low and high resistive paths set by the parameters of the passive device depending on whether crossing lines are present or not present in one of the plurality of sections, connecting the terminal to a distributed passive model, and coupling the crossing lines to the terminal via capacitors produced in an extracted netlist with the passive device having distributed coupling to a plurality of crossing lines.

Method and system of linking on-chip parasitic coupling capacitance into distributed pre-layout passive models

Methods for distributing a random variable by spatial interpolation with statistical corrections. The method includes assigning a numerical value of the random variable at each vertex of an array of equilateral triangles formed in a planar coordinate frame and defining a plurality of test points at respective spatial locations in the planar coordinate frame that are bounded by the array of equilateral triangles. A numerical value of the random variable is distributed at each of the test points by spatial interpolation from one or more of the numerical values of the random variable assigned at each vertex of the array of equilateral triangles. The method further includes adjusting the numerical value of the random variable distributed at each of the test points with a respective correction factor.

Methods for distributing a random variable using statistically-correct spatial interpolation

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Essex Junction, VT, United States of America

Cole E Zemke