Nxp B.v.

Sciosense B.v.

Ams International Ag

Coenraad Cornelis Tak

Hendrik Bouman

Roel Daamen

Willem Frederik Adrianus Besling

Remco Henricus Wilhelmus Pijnenburg

Olaf Wunnicke

Casper Van Der Avoort

Peter G Steeneken

Jan Sonsky

Evelyne Gridelet

Gerard Koops

Martin Schrems

Franz Schrank

Zoran Zivkovic

Matthias Merz

Martijn Goossens

Joerg Siegert

Leonardus Antonius Elisabeth Van Gemert

Romano Hoofman

Marten Oldsen

Jeroen Antoon Croon

Jörg Siegert

A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Sensor package and method of producing the sensor package

In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.

Semiconductor device and method for forming a semiconductor device

In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.

Pressure sensor device and method for forming a pressure sensor device

The sensor package comprises a carrier () including electric conductors (), an ASIC device () and a sensor element (), which is integrated in the ASIC device (). A dummy die or interposer () is arranged between the carrier () and the ASIC device (). The dummy die or interposer () is fastened to the carrier (), and the ASIC device () is fastened to the dummy die or interposer ().

A sensor package comprises a sensor chip bonded to an intermediate carrier, with the sensor element over an opening in the carrier. The package is for soldering to a board, during which the intermediate carrier protects the sensor part of the sensor chip.

Package for environmental parameter sensors and method for manufacturing a package for environmental parameter sensors

Disclosed is an integrated sensor chip package comprising an integrated sensor chip enveloped in a packaging layer (), the integrated circuit comprising a substrate () having a major surface; and a light sensor comprising a plurality of photodetectors (-) on a region of said major surface; the packaging layer comprising an opening () exposing said region, the integrated sensor chip package further comprising a light blocking member () over said opening, the light blocking member defining an aperture () exposing a first set of photodetectors to light from a first range of directions and exposing a second set of photodetectors to light from a second range of directions, wherein the first range is different to the second range. An apparatus including such an integrated sensor chip package and a method of manufacturing such an integrated sensor chip package are also disclosed.

Integrated sensor chip package with directional light sensor, apparatus including such a package and method of manufacturing such an integrated sensor chip package

A semiconductor device and a method of making the same. The semiconductor device includes a semiconductor substrate mounted on a carrier. The semiconductor substrate includes a Schottky diode. The Schottky diode has an anode and a cathode. The semiconductor device also includes one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier. The semiconductor device further includes one or more bond wires connecting the anode to a second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device. Both the cathode and the first electrically conductive portion of the carrier are electrically isolated from a backside of the semiconductor substrate.

Semiconductor device

One example embodiment discloses a chip having a chip area, wherein the chip area includes: an overhang area; a rigid coupling area, having a set of rigid coupling points, located on one side of the overhang area; and a flexible coupling area, having a set of flexible coupling points, located on a side of the overhang area opposite to the a rigid coupling area. Another example embodiment discloses a method for fabricating a die interconnect, comprising: fabricating a rigid coupler area, having a set of rigid coupler points, within a chip having a chip area; defining an overhang area within the chip area and abutted to the rigid coupler area; and fabricating a flexible coupler area, having a set of flexible coupler points, within the chip area abutted to a side of the overhang area opposite to the rigid coupler area.

Die interconnect

An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

Integrated circuits separated by through-wafer trench isolation

An integrated circuit package for an integrated circuit having one or more sensor elements in a sensor element area of the circuit. An encapsulation covers bond wires but leaves an opening over the sensor element area. A protection layer is provided over the integrated circuit over which the encapsulation extends, and it has a channel around the sensor element area to act as a trap for any encapsulation material which has crept into the opening area.

Integrated circuit with sensor and method of manufacturing such an integrated circuit

Disclosed is a pH sensor comprising a carrier () comprising a plurality of conductive tracks and an exposed conductive area () defining a reference electrode connected to one of said conductive tracks; a sensing device () mounted on the carrier and connected at least one other of said conductive tracks; an encapsulation () covering the carrier, said encapsulation comprising a first cavity () exposing a surface () of the sensing device and a second cavity () exposing the exposed conductive area, said second cavity comprising a reference electrode material () and an ion reservoir material () sharing at least one ion type with said reference electrode material, the reference electrode material being sandwiched between the exposed conductive area and the ion reservoir material. A method of manufacturing such a pH sensor is also disclosed.

Growing community of inventors

Waalre, Netherlands

Coenraad Cornelis Tak