Infineon Technologies Ag

International Rectifier Corporation

Infineon Technologies Americas Corp.

Clive O'Dell

Mark Pavier

Daniel Cutler

Rupert Burbidge

Scott Palmer

Chee Yang Ng

Josef Maerz

Stuart Cardwell

A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.

Semiconductor assembly with conductive frame for I/O standoff and thermal dissipation

According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.

Surface mountable power components

Growing community of inventors

Surrey, United Kingdom

Clive O'Dell