Dow Silicones Corporation

Dow Corning Corporation

Clinton Whiteley

Mark Jon Loboda

Kevin J Moeggenborg

Darren Hansen

Christopher Parfeniuk

Victor Torres

Ian Manning

Stephan Mueller

Jeffrey Quast

Michael Raymond Strong

Stanton James Dent

Jacob William Steinbrecher

Joel McDonald

Michelle R Cummings

Bradley W Tuft

Bradley Tuft

An injection moldable composition, comprising: A) a silicone resin (I) [RSiO][RRSiO][SiO], wherein R, R, and Rare hydrocarbyl, hydrocarbyloxy, or hydroxyl, at least one of Ror Ris alkenyl, subscripts a, b, and c are each &#x3e;0 and a+b+c=1, B) 0 to 90% (w/w), based on the weight of A) and B), of a silicone resin (II) [RSiO][SiO]wherein Ris hydrocarbyl, hydrocarbyloxy, or hydroxyl, at least one of Ris alkenyl, subscripts d and e are each &#x3e;0, and d+e=1, C) a siloxane polymer having formula (III), [RSiO]RRSiO]. wherein Rare hydrocarbyl or hydroxyl, at least one of Ris alkenyl, subscripts f and g are each &#x3e;0, and f+g=1, D) a silicone crosslinker having at least two silicon-bonded hydrogen atoms per molecule, and E) a hydrosilylation catalyst, wherein the ratio of silicon-bonded hydrogen atoms to carbon-carbon double bonds is from 1.2 to 2.2.

Injection moldable silicone composition

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Method for manufacturing SiC wafer fit for integration with power device manufacturing technology

Growing community of inventors

Midland, MI, United States of America

Clinton Whiteley