Lawrence Livermore National Security, LLC

Colorado State University Research Foundation

Clint Frye

Lars F Voss

Rebecca J Nikolic

Qinghui Shao

Sara Elizabeth Harrison

John Winter Murphy

Roger A Henderson

Mark A Stoyer

Devin Joseph Funaro

Dongxia Qu

Adam M Conway

Todd M Bandhauer

Tiziana C Bond

Jack Kotovsky

Mihail Bora

Vincenzo Lordi

Salmaan H Baxamusa

Paulius Vytautas Grivickas

Ian Seth Ladner

Thomas M Spinka

David Lawrence Hall

Joel Varley

Kyoung Eun Kweon

Noah Patrick Allen

Daniel Max Dryden

Brandon Demory

David Ryan Hobby

Caleb Del Anderson

Bikramjit Chatterjee

A product includes an elongated carbon-containing pillar having a bottom and a tip opposite the bottom. The width of the pillar measured 1 nm below the tip is less than 700 nm. A method includes masking a carbon-containing single crystal for defining masked regions and unmasked regions on the single crystal. The method also includes performing a plasma etch for removing portions of the unmasked regions of the single crystal, thereby defining a pillar in each unmasked region, and performing a chemical etch on the pillars at a temperature between 1200° C. and 1600° C. for selectively reducing a width of each pillar.

Silicon carbide nanoneedles and fabrication thereof

Amorphous silicon carbide may be doped with one or more ions such as vanadium and these ions may radiate light if excited, for example, using optical or electrical pumping. A single photon light source may be formed from a single such ion that is pumped or from a plurality of ions that are pumped if light from only one ion is collected, e.g., using an aperture or pin hole. Such single photon sources may possibly be use in quantum computing, quantum sensing and/or quantum telecommunications.

Doped amorphous silicon carbide

An apparatus includes a heterostructure including a substrate of Group-III-nitride material, a source layer including a dopant positioned on a surface of the substrate, and a conductive cap layer positioned on the source layer. A method of electric field-enhanced impurity diffusion includes obtaining a heterostructure including a substrate of Group-III-nitride semiconductor material, a source layer including a dopant positioned directly on the substrate, and a conductive cap layer positioned above the source layer, and applying a thermal annealing treatment to the heterostructure. An electric field gradient is established within the source layer and the cap layer for causing diffusion of an element from the substrate to the cap layer, and for causing diffusion of the dopant from the source layer to a former location of the element in the substrate thereby changing a conductivity and/or magnetic characteristic of the substrate.

Field assisted interfacial diffusion doping through heterostructure design

An optically addressable light valve comprises a first transparent conductor layer, a layer of liquid crystal, and a photoconductor comprising an ultrawide band gap (UWBG) semiconductor. The liquid crystal is between the first transparent conductor layer and the semiconductor photoconductor. The optically addressable light valve is configured to apply a voltage across the liquid crystal and the UWBG semiconductor. A second transparent conductor may be formed in the UWBG semiconductor in some configurations, and the voltage may be applied across the first and second transparent conductor.

Optically addressable light valves for high power operation

The present disclosure relates to a laser diode system. The system may have at least one laser diode emitter having a substrate, at least one laser diode supported on the substrate, and a facet which a laser beam generated by the laser diode is emitted. A cooling subsystem is included which is disposed in contact with the substrate of the laser diode emitter. The cooling subsystem includes a plurality of cooling fins forming a plurality of elongated channels for circulating a cooling fluid therethrough to cool the laser diode emitter. The cooling fluid also flows over the facet of the laser diode emitter.

Systems and methods for laser diode array having integrated microchannel cooling

According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.

Liquid semiconductor-halogen based electronics

According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.

Metal-based passivation-assisted plasma etching of III-v semiconductors

In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.

Gallidation assisted impurity doping

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

Radiation tolerant microstructured three dimensional semiconductor structure

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Livermore, CA, United States of America

Clint Frye