Honeywell G.m.b.h.

Clifford H Boler

Dennis J Wilwerding

Thomas E Hendrickson

Marc D Hartranft

An IGFET is presented which includes a relatively low resistance path across the source-substrate junction to prevent parasitic bipolar effects while maintaining high component density in integrated circuits. The low resistance path across the source-substrate junction is formed by various methods including damaging the crystal structure at the junction interface, supplementing the damaged junction with a heavily doped region underlying the source region and spiking metallurgy. A particular application of the invention allows the prevention of latchup in CMOS devices. The invention also allows the source region of an IGFET to serve the dual functions of a source for a MOSFET as well as an ohmic contact to the underlying well or substrate.

Reducing bipolar parasitic effects in IGFET devices

An electronic imager arrangement is provided in which the time duration for sensing radiation is established by determining the amount of radiation already sensed.

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New Hope, MN, United States of America

Clifford H Boler