Micron Technology Incorporated

Cypress Semiconductor Corporation

Crossbar, Inc.

Cliff Zitlaw

Frankie F Roohparvar

Stephan Rosner

Kevin Widmer

David A Eggleston

Sergey Ostrikov

John Frederic Schreck

Brian M Shirley

Simon J Lovett

Yoram Betser

Roger D Norwood

Hans Van Antwerpen

Morgan Andrew Whately

Kobi Danon

Amir Rochman

Yuichi Ise

Hagop A Nazarian

Anthony Le

Steven Walter Wilson

Yoav Yogev

Sandeep Krishnegowda

Avi Avanindra

Sunil Atri

Kevin C Zitlaw

A memory device that includes a first port and a second port. The first port includes a first clock input, at least one first command address input, and at least one data input or output configured to transfer data in relation to the memory device. The second port includes a second clock input and at least one command, address, and data input/output (I/O) configured to receive command and address information from, and to transfer data in relation to the memory device. The memory device also includes a plurality of memory banks, in which two different memory banks may be accessed respectively by the first and the second ports concurrently. Other embodiments of the memory device and related methods and systems are also disclosed.

Multi-ported nonvolatile memory device with bank allocation and related systems and methods

A method can include, in response to receiving a read request at a memory controller, sending a read command and address values on a command address bus in synchronism with a clock. In response to the read command, receiving an uninterrupted burst of read data values on at least one parallel data bus, the burst of read data values having double date rate with respect to the clock, and receiving error correction code (ECC) values for the read data values in response to the same read command, the ECC values not being included in the burst of read data values being output on non-ECC input/outputs (I/Os); wherein the non-ECC I/Os are I/Os not assigned to ECC data according to a preexisting standards organization. Corresponding systems and devices are disclosed.

Methods for error detection and correction and corresponding systems and devices for the same

A device can include a plurality of processing sources; a multiplexer (MUX) configured to assign read requests from the processing sources to predetermined time division multiplexer (TDM) command slots. A memory controller can generate nonvolatile memory (NVM) command and address data from read requests received from the MUX during the TDM command slots assigned to the read requests on a unidirectional command-address bus. The address data can include at least a bank address. The device can also receive read data on a unidirectional parallel data bus in synchronism with rising and falling edges of a received data clock. The read data can be received in TDM read slots having a predetermined order. A demultiplexer can provide the read data of each TDM read slot to one of the processing sources based on the TDM read slot position in the predetermined order. Related methods and systems are also disclosed.

Memory controller for non-interfering accesses to nonvolatile memory by different masters, and related systems and methods

An apparatus includes a non-volatile memory (NVM) device coupled to a host, the NVM device including a processing device to: receive a communication packet from a server via the host computing system that is coupled to the NVM device and communicatively coupled to the server, the communication packet comprising clear text data that requests to initiate secure communications; perform a secure handshake with the server, via communication through the host computing system, using a secure protocol that generates a session key; receive data, via the host computing system, from the server within a secure protocol packet, wherein the data is inaccessible to the host computing system; authenticate the data using secure protocol metadata of the secure protocol packet; optionally decrypt, using the session key, the data to generate plaintext data; and store the plaintext data in NVM storage elements of the NVM device.

Secured communication from within non-volatile memory device

An apparatus including non-volatile memory to store a forensic key and data, the data received from a host computing system. A processing device is coupled to the non-volatile memory and is to: allow writing the data, by the host computing system, to a region of the non-volatile memory; in response to a lock signal received from the host computing system, assert a lock on the region of the non-volatile memory, the lock to cause a restriction on access to the region of the non-volatile memory by an external device; and provide unrestricted access, by the external device, to the region of the non-volatile memory in response to verification of the forensic key received from the external device.

Securing data logs in memory devices

Example apparatus, systems and methods receive a new firmware image at a memory device and place the new firmware image into second nonvolatile storage locations of the memory device such that the second nonvolatile storage locations do not overlap with first nonvolatile storage locations of the memory device that store a current firmware image. Embodiments place a logical address to physical address mapping for the new firmware image into a remap data structure stored in memory circuits of the memory device. The remap data structure also includes a logical address to physical address mapping for the current firmware image. Embodiments provide a first status value to indicate that the logical address to physical address mapping for the new firmware image is a valid firmware image and a second status value to indicate that the logical address to physical address mapping for the current firmware image is an invalid firmware image.

Memory devices, systems, and methods for updating firmware with single memory device

A nonvolatile memory device can include a serial port having at least one serial clock input, and at least one serial data input/output (I/O) configured to receive command, address and write data in synchronism with the at least one serial clock input. At least one parallel port can include a plurality of command address inputs configured to receive command and address data in groups of parallel bits and a plurality of unidirectional data outputs configured to output read data in parallel on rising and falling edges of a data clock signal. Each of a plurality of banks can include nonvolatile memory cells and be configurable for access by the serial port or the parallel port. When a bank is configured for access by the serial port, the bank is not accessible by the at least one parallel port. Related methods and systems are also disclosed.

A device can include a plurality of regions, each region including a plurality of nonvolatile memory cells: a permission store configured to store a set of permission values, including at least one permission value for each region in a nonvolatile fashion; and access control circuits configured to control access to each region according to the permission value for the region, including one or more of requiring authentication to access the region, encrypting data read from the region, and decrypting data for storage in the region. Related methods and systems are also disclosed.

Nonvolatile memory device with regions having separately programmable secure access features and related methods and systems

Systems and/or methods are provided that facilitate employing a variable read latency on a serial memory bus. In an aspect, a memory can utilize an undefined amount of time to obtain data from a memory array and prepare the data for transfer on the serial memory bus. The serial memory bus can be driven to a defined state. When data is ready for transfer, the memory can assert a start bit on the serial memory bus to notify a host prior to initiating the data transfer.

Variable read latency on a serial memory bus

A memory device can include a memory cell array and a remap data structure. A remap data structure can include a mapping history section configured to store sets of mappings between logical addresses and the physical addresses of the regions, and a status section configured to identify one of the sets of mappings as a live set for the device. Control logic can be coupled to the memory cell array and the remap data structure and configured to enable access to the storage locations and remap data structure. Firmware update systems and methods, including firmware-over-the-air (FOTA), that include a memory device are also disclosed.

Providing for a multi-bank memory with bank-specific status feedback is described herein. By way of example, the multi-bank memory can be configured to output an availability status, pass/fail status, error correction status, or the like, for subsets of multiple memory banks. In some embodiments, the non-volatile memory can provide global status information, representing a status of all banks commonly in conjunction with bank-specific status information. Further, the subject disclosure provides addressing techniques for identifying particular banks of memory, and obtaining status information for subsets of the memory banks, or performing memory operations on targeted subsets of the memory banks.

Multiple-bank memory device with status feedback for subsets of memory banks

Providing for an electronic memory apparatus having high-density, non-volatile memory arrays in conjunction with a high-speed communication interface is disclosed herein. In some embodiments, the electronic memory apparatus can include multiple banks of two-terminal memory, communicatively connected to a modified dynamic random access memory bus and configured to operate according to a modified communication protocol. In one or more embodiments, the high-speed communication interface can comprise more than ten command and address pins to identify individual memory banks (or subsets of memory banks) of the multiple banks of memory, to facilitate bank-specific addressing for memory array operations. In some embodiments, the electronic memory can facilitate status information for subsets of memory banks to facilitate informed array operations, increasing duty cycle of the memory device.

Memory apparatus with non-volatile two-terminal memory and expanded, high-speed bus

Providing for a memory apparatus comprising multiple banks of non-volatile memory and a high-speed data bus is described herein. By way of example, the memory apparatus can employ a standard or near-standard DRAM bus as an interface to high-performance two-terminal memory arrays. Interleaved operation can facilitate throughputs over 2gigabytes/second, in various embodiments, and larger throughputs in at least some embodiments, by interleaving multiple memory banks that are separately addressed via one or more mode registers, referred to as an index register(s). Further, the memory apparatus can have one or two terabytes of total storage, with capacity to increase storage volume. According to various embodiments, the memory apparatus can operate with a standard DRAM controller, or a memory controller configured with a DRAM communication protocol, modified in software or firmware to match configurations of the non-volatile memory employed for the multiple banks of memory.

Multi-bank non-volatile memory apparatus with high-speed bus

A memory subsystem is disclosed. The memory subsystem includes a serial peripheral interface (SPI) double data rate (DDR) volatile memory component, a serial peripheral interface (SPI) double data rate (DDR) non-volatile memory component coupled to the serial peripheral interface (SPI) double data rate (DDR) volatile memory component and a serial peripheral interface (SPI) double data rate (DDR) interface. The serial peripheral interface (SPI) double data rate (DDR) interface accesses the serial peripheral interface (SPI) double data rate (DDR) volatile memory component and the serial peripheral interface (SPI) double data rate (DDR) non-volatile memory component where data is accessed on leading and falling edges of a clock signal.

High speed serial peripheral interface memory subsystem

Providing a RRAM based memory storage device that has a NAND memory type architecture with a configurable page size. In an embodiment, two memory registers can be used to access and transfer data stored in the storage device to a host. A memory controller on the storage device can determine a page size of the host, and alternately transfer data from the first register and then the second register until an amount of data transferred equals the page size of the host. The memory controller can send the data to the host as if the data belonged to one page transfer. In this way, the memory controller creates a virtualized page size based on the requirements of the host.

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San Jose, CA, United States of America

Cliff Zitlaw