Lucent Technologies Inc.

Cletus Walter Wilkins, Jr

Sailesh Mansinh Merchant

Pradip Kumar Roy

Arun Kumar Nanda

Cheryl Anne Bollinger

Edward Alan Dein

A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems.

Multilayered A1-alloy structure for metal conductors

A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems. The selection of the thickness of the second sublayer to be a major portion and the inclusion of barrier layers are also described.

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Orlando, FL, United States of America

Cletus Walter Wilkins, Jr