Centre National De La Recherche Scientifique

Université Grenoble Alpes

Université Paul Sabatier (toulouse Iii)

Institut Polytechnique De Grenoble

Institut National Polytechnique De Toulouse

Institut National De La Sante Et De La Recherche Medicale (inserm)

Clement Hebert

Nicolas Rouger

Julien Pernot

Martin Kah

Cedric Masante

A device including a first portion, a second portion, a first contact and a second contact, the first portion being made of a semiconductor having a first doping, the second portion being made of a semiconductor having a second doping different than the first, the first portion and the second portion forming a p/n junction including a depletion zone in the first portion, the contacts being configured so that when an electric voltage (V) is applied between the contacts, a dimension of the depletion zone depends on a value of the electric voltage, an ionization energy being defined for dopants of the second portion. The device includes an emitter generating a radiation having an energy greater than the ionization energy and illuminating the second portion with the radiation.

Optoelectronic device, single-photon generator, memory, multiplexer, implant and associated methods

Growing community of inventors

Fontaine, France

Clement Hebert