Infineon Technologies Austria Ag

Clemens Rössler

Silke Auchter

Ralf Otremba

Josef Höglauer

Helmut Schoenherr

Günther Lohmann

Peter Oles

Matthias German Dietl

Lina Purwin

Alexander Zesar

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

Device for controlling trapped ions with low heat dissipation

A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat includes a housing frame provided for pre-assembly in the cryostat. A pin insert is arranged in the housing frame. The pin insert includes a base plate and contact pins. The contact pins are arranged in an array. A housing cover has a receptacle for the substrate. The housing cover, when assembled with the housing frame, exerts a compressive force on a front side of the substrate by which a rear side of the substrate is pressed onto the contact pins.

Cryostat socket for holding an ion trap device mounted on a substrate in a cryostat

Growing community of inventors

Villach, Austria

Clemens Rössler