Osram Opto Semiconductors Gmbh

Clemens Hofmann

Petrus Sundgren

Martin Brandl

Daniel Richter

Elmar Baur

Martin Hohenadler

The disclosure relates to a halogen lamp replacement, in particular for car headlights, having a carrier plate which is covered on both main surfaces by structured electrically conductive layers, to which at least one respective light-emitting component, in particular at least one respective light-emitting-diode chip, is attached, the carrier plate being designed to dissipate heat generated by the light-emitting components to a heat sink formed by a coupling structure.

Halogen lamp replacement

A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlGaAs layers with 0.5&#x3c;x&#x2266;1.

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Neutraubling, Germany

Clemens Hofmann