Nxp B.v.

Clemens De Haas

Matthias Berthold Muth

Hartmut Habben

Gerrit Bollen

Anthony Adamson

Inesz Weijland

Edwin Jan Schapendonk

Henk Boezen

A circuit is provide comprising a first input coupled to a transmit data input of a bus transceiver; and a first output coupled to a bus. The circuit is configured to be coupled in parallel with the bus transceiver. The circuit is further configured to, in response to a dominant to recessive transition on the transmit data input, lower an impedance of the bus.

Push pull ringing suppression circuit

A Controller Area Network, CAN, device, () is described that includes: a CAN transmitter () connected to two CAN bus terminals () of the CAN device (); a receiver circuit () operably coupled to the two CAN bus terminals () of the CAN device (); and a controller () connected to the CAN transmitter (). The controller () is configured to: determine whether the CAN device () is operating as a transmitter node or a receiver node; detect a transition of the CAN device () from a dominant state to a recessive state; and in response to detecting both a transition of the CAN device () from the dominant state to the recessive state, and the determination of whether the CAN device () is operating as a transmitter node or a receiver node, control an output impedance of the CAN transmitter () to be within an impedance value range whilst a differential driver voltage on a CAN bus () connected to the CAN device () decreases to a predefined voltage.

Controller area network (CAN), CAN device and method therefor

A circuit is provided for ringing suppression. The circuit comprises a termination resistor coupled to a bus via a switch; and a control circuit. The control circuit comprises an input coupled to a data input pin of a bus transceiver and an output coupled to control the termination resistor. The circuit is configured to selectively couple the resistor to the bus in response to a transition on the input bit stream.

Feedforward ringing suppression circuit

The present invention relates to a circuit arrangement, which is used for controlling a high side CMOS transistor (M) in a high voltage deep sub micron process. To provide a circuit arrangement for switching a high side CMOS transistor (M) in a circuit having a very thin gate oxide, produced by a deep sub micron process, a circuit arrangement is proposed for controlling a high side CMOS transistor (M), wherein the high side CMOS transistor (M) is coupled between a high side voltage potential (Vbat) and a control output (OUT) for switching an external device, the high side CMOS transistor (M) is controlled at its gate by a reference potential (Vbat-Vref), which is provided by a high side voltage reference () having a capacitor (C), which is charged for switching on and discharged for switching off the high side CMOS transistor (M).

Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process

Circuit arrangement, LIN comprising such circuit arrangement as well as method for processing input signals of the LIN In order to further develop a circuit arrangement ()&#x2014;for processing at least one input signal () from at least one data bus () of at least one LIN and&#x2014;for providing the data bus () with at least one output signal (), as well as a corresponding operating method in such way that EMI performance and/or EMI performance of the LIN () is improved, it is proposed to provide&#x2014;at least one analog-digital converting circuit (ADC) for converting the analog input signal () into at least one digital signal () to be processed, and&#x2014;at least one digital-analog converting circuit (DAC) for converting the processed digital signal () into the analog output signal ().

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Ewijk, Netherlands

Clemens De Haas