International Business Machines Corporation

Clayton C Williams

Hemantha Kumar Wickramasinghe

Hermantha K Wickramasinghe

James Albert Slinkman

John Samuel Batchelder

Marc A Taubenblatt

Donald M DeCain

An apparatus and method for generating microscopic scan data of C-V and/or dC/dV over a scan area. A scanning microscope, for example a scanning force microscope, is provided with a voltage biased tip, for example, of tungsten, which is scanned across an area to derive the data. The data can be used to derive a plot of semiconductor dopant level across the scan area. Other material properties can be derived, for example, carrier generation and recombination rates and subsurface defects.

Scanning capacitance - voltage microscopy

A method and apparatus for monitoring process fluids used in the manufacture of semiconductor components and other microelectronic devices relies upon detection of the phase shift of a pair of optical energy beams encountering a bubble or particle in the fluid. The system distinguishes between bubbles and particles having indices of refraction greater than the surrounding fluid and between different types and sizes of particles.

Particulate inspection of fluids using interferometric light measurements

A near field optical microscopy method and apparatus eliminates the necessity of an aperture for scanning a sample surface and greatly reduces the detected background signal. A small dimension tip, on the order of atomic dimension, is disposed in close proximity to the sample surface. A dither motion is applied to the tip at a first frequency in a direction substantially normal to the plane of the sample surface. Dither motion is simultaneously applied to the sample at a second frequency in a direction substantially parallel to the plane of the sample surface. The amplitude of the motions are chosen to be comparable to the desired measurement resolution. The end of the tip is illuminated by optical energy. The scattered light from the tip and surface is detected at the difference frequency for imaging the sample surface at sub-wavelength resolution without the use of an aperture. Alternatively, the tip is maintained stationary and the sample undergoes motion in the two directions.

Apertureless near field optical microscope

Apparatus is provided for investigating surface structures irrespective of the materials involved. A fine scanning tip is heated to a steady state temperature at a location remote from the structure to be investigated. Thereupon, the scanning tip is moved to a position proximate to, but spaced from the structure. At the proximate position, the temperature variation from the steady state temperature is detected. The scanning tip is scanned across the surface sturcture with the aforesaid temperature variation maintained constant. Piezo electric drivers move the scanning tip both transversely of, and parallel to, the surface structure. Feedback control assures the proper transverse positioning of the scanning tip and voltages thereby generated replicate the surface structure to be investigated.

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Peekskill, NY, United States of America

Clayton C Williams