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Claudio Nava

Nicola Del Gatto

Alessandro Magnavacca

Marco Ferrario

Massimiliano Mollichelli

Massimiliano Scotti

A memory device may include an array of addressable three-level cells, a coding circuit being input with three-bit strings and generating corresponding ternary strings based upon a code, and a program circuit being input with the ternary strings and storing them in respective pairs of three-level cells. The memory device also may include a read circuit reading stored ternary strings in the respective pairs of three-level cells, and a decoding circuit being input with the stored ternary strings and generating corresponding strings of three bits based upon the code.

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Claudio Nava