Avago Technologies Fiber IP (singapore) Pte. Ltd

Prima Electro S.p.a.

Avago Technologies Fiber IP Pte Ltd.

Claudio Coriasso

Roberto Paoletti

Alessandro Stano

Marzia Rosso

Simone Codato

Ruiyu Fang

Cesare Rigo

Paolo Valenti

Pietro Della Casa

Guido Alberto Roggero

Paul Marshall Charles

Rui Yu Fang

Michele Agresti

Marco Vallone

Giancarlo Meneghini

Marina Meliga

Paolo Calefati

A method for making a laser diode with a distributed grating reflector (RT) in a planar section of a semiconductor laser with stabilized wavelength includes providing a diode formed by a substrate (S), a first cladding layer (CL) arranged on the substrate (S), an active layer (A) arranged on the first cladding layer (CL) and adapted to emit a radiation, and a second cladding layer (CL) arranged on the active layer (A), said cladding layers (CL, CL) being adapted to form a heterojunction to allow for efficient injection of current into the active layer (A) and optical confinement, and a contact layer. The manufacturing method provides for creating, on a first portion (ZA) of the device, a waveguide (GO) for confinement of the optical radiation and, on the remaining portion (ZP) of the device, two different gratings for light reflection and confinement. The two gratings define two different zones (R, R), wherein the first zone (R) includes a grating of low order and high duty cycle, and is intended for reflection, and the second zone (R) includes a grating of the same order, or a grating of a higher order than the previous one, and low duty cycle, and is mainly intended for light confinement. The waveguide (GO) for confining the optical radiation is implemented through a lithography and a subsequent etching, whereas the grating (RT) requires a high-resolution lithography and a shallow etching starting from a planar zone.

Method for making a semiconductor laser diode, and laser diode

A laser-diode device includes a substrate; at least one first cladding layer placed on the substrate; an active layer placed on the first cladding layer and arranged to emit a radiation; at least one second cladding layer placed on the active layer, said cladding layers being adapted to form a heterojunction; a first terminal facet and a second terminal facet placed transversally relative to the cladding layers and to the active layer; a periodic structure, placed in proximity to the second terminal facet and within the second cladding layer, and belonging to an optical cavity, wherein the first terminal facet represents the output mirror from which the radiation generated by the active layer exits, and the second terminal facet, integrated by the periodic structure, represents a second mirror having high reflectivity, so that the radiation produced by the active layer exits almost totally through the first mirror.

Semiconductor laser diode and method of manufacture thereof

A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Integrated photonic semiconductor devices and methods for making integrated photonic semiconductor devices

Integrated photonic semiconductor devices and methods for making integrated photonic semiconductors devices

An laser/modulator assembly includes a laser source, such as a distributed feedback (DFB) laser, and a modulator, such as an electro-absorption modulator (EAM), integrated along a common waveguide. The waveguide has a distal end bent to define an inner side of the bent waveguide. A low reflectivity facet is arranged at the distal end of the waveguide, and a mirror is arranged at the inner side of the distal end of the waveguide to prevent any back reflection into the EAM waveguide from said low reflectivity facet, and the lateral trenches typically associated therewith.

Integrated modulator/laser assembly and a method of producing same

A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler. The method includes the steps of:

Wide tuneable laser sources

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Turin, Italy

Claudio Coriasso