Infineon Technologies Canada Inc.

Claudio Andres Canizares

Thomas William Macelwee

Vineet Unni

A transistor structure that includes multiple heterojunction layer sets, each generating a two-dimensional electron gas (2DEG), such that the transistor structure has a stack of 2DEGs that may be used to conduct between source and drain. A terminal is provided proximate an uppermost 2DEG to control whether the uppermost 2DEG is continuous between a source contact and a source plug. A source plug connects the uppermost 2DEG with the next 2DEG, and a drain plug also connects the uppermost 2DEG with the next 2DEG. Thus, the gate terminal may control the flow of current in sub-surface 2DEGs between the source and drain.

Growing community of inventors

Morgan Hill, CA, United States of America

Claudio Andres Canizares