Stmicroelectronics S.r.l.

Claudia Caligiore

Salvatore Leonardi

Salvatore Coffa

Salvatore Baglio

Salvatore Abbisso

Guglielmo Fortunato

Luigi Mariucci

Giuseppe Antonio Maria Nastasi

Massimo Cuscuna

Lidia Maddiona

Bruno Ando′

Francesca Paola Tramontana

An embodiment relates to a device integrated on a semiconductor substrate of a type comprising at least one first portion for the integration of at least one microfluidic system, and a second portion for the integration of an additional circuitry. The microfluidic system comprises at least one cavity realized in a containment layer of the integrated device closed on top by at least one portion of a polysilicon layer, this polysilicon layer being a thin layer shared by the additional circuitry and the closing portion of the cavity realizing a piezoresistive membrane for the microfluidic system.

Integrated device of the type comprising at least a microfluidic system and further circuitry and corresponding integration process

A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.

Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device

A driving circuit of an OLED diode is inserted between a first and a second voltage reference and having at least one input terminal receiving an input voltage signal and an output terminal for the generation of a driving current of the OLED diode, the driving circuit having at least one driver transistor having a first conduction terminal connected to the first voltage reference, a second conduction terminal connected to the output terminal and a control terminal connected to at least one first capacitor and one second capacitor. The first capacitor is inserted between this control terminal and an inner circuit node and the second capacitor is inserted between the inner circuit node and the second voltage reference, the driving circuitfurther including: a first switch inserted between the input terminal and the inner circuit node; a second switch inserted between the first conduction terminal and control terminal of the driver transistor, and a third switch inserted between the inner circuit node and the second voltage reference, in parallel to the second capacitor, as well as a fourth switch inserted between the first voltage reference and the first conduction terminal of the driver transistor.

Driving circuit for an OLED (organic light emission diode), in particular for a display of the AM-OLED type

A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.

Thin-film transistor (TFT) device

A process for realizing TFT devices on a substrate comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device.

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Giarre, Italy

Claudia Caligiore